Results 81 to 90 of about 2,912 (170)
Quantitative Study of Metal Gettering in Silicon
, 1985 Intrinsic gettering of iron in silicon has been investigated with a novel quantitative approach. Concentrations of electrically active, interstitial iron were determined by Electron Pararnagnetic Resonnance before, and after, various annealing cycles ...
E. R. Weber, Etienne G. Colas, S. Hahn
core +1 more source
Gettering of Pd to implantation-induced nanocavities in Si [PDF]
, 2015 The gettering of Pd to nanocavities in Si for implantation doses ranging from 5×10¹³ to 1×10¹⁵ cm¯² and annealing temperatures ranging from 750 to 1050 °C was investigated using Rutherford backscattering and cross-sectional transmission electron ...
de M. Azevedo, G. +3 more
core +1 more source
Main defect reactions behind phosphorus diffusion gettering of iron
, 2022 Art. 244503, 8 S.Phosphorus diffusion is well known to getter effectively metal impurities during silicon solar cell processing. However, the main mechanisms behind phosphorus diffusion gettering are still unclear.
Schön, Jonas +5 more
core +1 more source
Physical Modeling of Backside Gettering
, 1984 To understand gettering action we have modeled the diffusion of metal to a backside getter. A first order model describing the diffusion of metals to an infinite backside sink is found not to fit experimental data.
Gary B. Bronner, James D. Plummer
core +1 more source
Copper in silicon: Quantitative analysis of internal and proximity gettering [PDF]
, 1997 The behavior of copper in the presence of a proximity gettering mechanism and a standard internal gettering mechanism in silicon was studied. He implantation-induced cavities in the near surface region were used as a proximity gettering mechanism and ...
Weber, E.R., McHugo, S.A., Flink, C.
core
, 1986 This paper reviews the basis for phenomenological path for gettering: release, diffusionand capture in the context of old and new developments. More recent precipitation studies in silicon are now recognized to involve complex interactive effects ...
T. F. Seidel
core +1 more source
Intrinsic Gettering in Oxygen-Free Silicon
, 1984 We found that the intrinsic gettering can be effectively realized in oxygen-lean Czochralski silicon grown in a magnetic field as well as in oxygen-free float-zone silicon.
K. Nauka, H. C. Gatos, J. Lagowski
core +1 more source
EPJ PhotovoltaicsIn this work, the long-term behavior of excess charge carrier lifetime in n-type FZ-Si wafers without presence of highly doped layers is investigated during illumination at elevated temperatures.
Mehler Melanie +5 more
doaj +1 more source
Impurity Gettering in Silicon by Thin Polycrystalline Films
, 1992 Capability of impurity gettering by thin polycrystalline films on the backside of silicon wafer was evaluated by minority-carrier diffusion length. Cu was gettered easily during usual cooling after high temperature annealing.
Y. Hayamizu, S. Ushio, T. Takenaka
core +1 more source
Main defect reactions behind phosphorus diffusion gettering of iron [PDF]
, 2014 Phosphorus diffusion is well known to getter effectively metal impurities during silicon solar cell processing. However, the main mechanisms behind phosphorus diffusion gettering are still unclear.
Schön, Jonas +5 more
core +1 more source