Results 81 to 90 of about 2,452 (221)
Nucleation Time Effects on Intrinsic Gettering
, 1984 In this study, nucleation time has been found to play an important role in the three-step (Hi-Lo-Hi) intrinsic gettering process. The longer the nucleation time, the higher the density of oxygen precipitates and oxidation induced stacking faults.
M. L. Malwah, C.-C. D. Wongm, L. Pollock
core +1 more source
Main defect reactions behind phosphorus diffusion gettering of iron [PDF]
, 2014 Phosphorus diffusion is well known to getter effectively metal impurities during silicon solar cell processing. However, the main mechanisms behind phosphorus diffusion gettering are still unclear.
Schön, Jonas +5 more
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Impact of Iron Contamination on Liquid Properties and Microstructural Evolution in AlSi20
Advanced Engineering Materials, Volume 27, Issue 14, July 2025.Recycled aluminum is much more energy conservative and sustainable than primary aluminum. However, the iron contamination in secondary aluminum is vastly responsible for the degradation of the material properties. Herein, it is aimed to evaluate the influence of iron contamination in hypereutectic Al–Si alloy through thermodynamic as well as ...
Layla Shams Tisha +2 more
wiley +1 more source
An Atomic‐Scale View at γ’‐Fe4N as Hydrogen Barrier Material
Advanced Materials Interfaces, Volume 12, Issue 13, July 14, 2025.This study demonstrates the efficacy of γ’‐Fe4N nitride layers, formed via gas nitriding, as hydrogen permeation barriers. Advanced characterization, hydrogen permeation analysis, and DFT calculations reveal a 20 fold reduction in hydrogen diffusion at room temperature.
Aleksander Albrecht +11 more
wiley +1 more source
Фізика і хімія твердого тіла, 2020 In this paper, the transmission and reflection spectra of single crystals р-CdTe(111) are measured; solid solutions of Cd1-хZnхTe (х=0.1) in the range (0.2 – 1.7)·10-6 m before and after laser irradiation at the wavelength λ = 532 nm in the energy range ...
P. O. Gentsar, S. M. Levytskyi
doaj +1 more source
, 2002 We have pet-formed measurements on the gettering efficiencies for Ni in different silicon wafers. Gettering efficiencies were measured of wafers grown by different crystal-growth techniques, such as Czochralski-grown (CZ) and floating zone (FZ), as well ...
Fabry, L., Hölzl, R., Range, K.-J.
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Synthesis of Indium Nitride Epitaxial Layers on a Substrate of Porous Indium Phosphide [PDF]
Журнал нано- та електронної фізики, 2015 The paper presents a technique to obtain InN films on porous InP substrates by radical-beam gettering epitaxy. According to the results of the Auger spectroscopy, InN film thickness ranged from 100 nm to 0.5 microns depending on the etching conditions.
J.A. Suchikova
doaj
Effectiveness of CVD thin Film Backside Gettering and Its Interaction with Intrinsic Gettering
, 1986 The effectiveness of CVD thin film backside gettering on n-type CZ silicon wafers for CMOS technology has been investigated using optical techniques for bulk microdefect analyses and transmission electron microscopy for interfacial structure study.
C.-C. D. Wong +3 more
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EPJ PhotovoltaicsIn this work, the long-term behavior of excess charge carrier lifetime in n-type FZ-Si wafers without presence of highly doped layers is investigated during illumination at elevated temperatures.
Mehler Melanie +5 more
doaj +1 more source
Surface modifications by wet oxidation method removing getter layer in crystalline silicon cells. [PDF]
RSC Adv, 2023 Zhang G +5 more
europepmc +1 more source