Results 161 to 170 of about 5,995,114 (237)

Radiative Thermal Management for Extreme Environments: Mechanisms and Design Strategies

open access: yesAdvanced Materials, EarlyView.
In this review, we discuss the fundamental mechanisms of radiative cooling and solar heating, material and structural design strategies, hybrid approaches integrating additional heat transfer pathways, and durability‐oriented designs addressing environmental stresses.
Hyung Rae Kim   +5 more
wiley   +1 more source

Nonplanar Bouligand Architectures for Enhanced Mechanical Performance in Cementitious Composites

open access: yesAdvanced Materials, EarlyView.
Inspired by the impact region of the Mantis shrimp dactyl club, nonplanar additive manufacturing translates sinusoidal Bouligand architectures into cementitious composites. Printing‐induced anisotropy and architected interfaces promote distributed damage and arrest crack propagation, enhancing strength and energy absorption.
Yu Wang   +7 more
wiley   +1 more source

1T‐to‐2H Phase Evolution During Epitaxial Growth of Transition Metal Dichalcogenides

open access: yesAdvanced Materials, EarlyView.
During MOCVD growth of MoS2 and WSe2, a transient metallic 1T phase emerges in early, edge‐rich, chalcogen‐deficient domains and declines as the films ultimately coalesce as 2H material. Together, experiments and ReaxFF simulations link domain size, edge stoichiometry, and vacancies to this evolution.
Andrew R. Graves   +8 more
wiley   +1 more source

Turning Nd‐Fe‐B Swarf Into High‐Value Bulk Feedstocks via Sustainable Hydrogen Plasma: From Rare‐Earth Oxides to Metals and Hydrides

open access: yesAdvanced Materials, EarlyView.
Oxidized Nd‐Fe‐B magnet swarf is transformed into valuable bulk feedstock through a single‐step hydrogen plasma process. The reaction converts complex rare‐earth‐containing waste into separated metallic, oxide, and hydride fractions without acid leaching.
Naritai Chimed   +9 more
wiley   +1 more source

Thickness‐Defined Transport Regime Toward Near‐Ideal Area‐Type Switching

open access: yesAdvanced Materials, EarlyView.
By thinning the oxide layer, memristors pass from diode‐like and battery‐effect‐dominated behavior toward eventual short‐circuit failure. Within the intermediate 5–6 nm window, they reach a near‐ideal analog area‐type switching regime, featuring symmetric hysteresis, area‐dependent conductance, and continuous linear programming of HRS and LRS with ...
Cuo Wu   +12 more
wiley   +1 more source

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