Results 31 to 40 of about 14,384 (227)

Geometrically Necessary Dislocation Analysis of Deformation Mechanism for Magnesium under Fatigue Loading at 0 °C

open access: yesCrystals, 2023
This study focused on the analysis of geometrically necessary dislocation (GND) densities for five selected fine-grained magnesium samples. Among the samples, three were tested under different fatigue-loading conditions at 0 °C, one experienced quasi ...
Qizhen Li
doaj   +1 more source

A Geodetic Normal Distribution Map for Long-Term LiDAR Localization on Earth

open access: yesIEEE Access, 2021
Light detection and ranging (LiDAR) sensors enable a vehicle to estimate a pose by matching their measurements with a point cloud (PCD) map. However, the PCD map structure, widely used in robot fields, has some problems to be applied for mass production ...
Chansoo Kim   +5 more
doaj   +1 more source

Rafting of Ni‐Based Superalloys Under Multiaxial Load as Understood by Phase‐Field Simulations and Critical Experiments

open access: yesAdvanced Engineering Materials, EarlyView.
Phase‐field simulations coupled with dislocation‐density‐based crystal plasticity modeling reproduce γ′ rafting behavior in single‐crystal Ni‐based superalloys under varied loading conditions. The model captures both macroscopic creep and microscopic morphology evolution, with results matching high‐temperature creep experiments.
Micheal Younan   +5 more
wiley   +1 more source

Origins of a cyanobacterial 6-phosphogluconate dehydrogenase in plastid-lacking eukaryotes

open access: yesBMC Evolutionary Biology, 2008
Background Plastids have inherited their own genomes from a single cyanobacterial ancestor, but the majority of cyanobacterial genes, once retained in the ancestral plastid genome, have been lost or transferred into the eukaryotic host nuclear genome via
Watanabe Masakatsu   +4 more
doaj   +1 more source

Alkali Ion‐Incorporated HfO2 Dielectrics for Reconfigurable Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
This work presents an indium gallium zinc oxide (IGZO) transistor with an alkali cation‐integrated hafnium dioxide (HfO2) dielectric exhibiting synaptic behavior via ion retention. The solution‐based film fabrication strategy overcomes the limitations of atomic layer deposition (ALD) and precursor coating, enabling the control of synaptic retention ...
Seung Yeon Ki   +7 more
wiley   +1 more source

Geometrically Necessary Dislocations on Plastic Deformation of Polycrystalline TRIP Steel

open access: yesCrystals, 2019
In this study, the main deformation behavior in terms of geometrically necessary dislocations (GND) was investigated on a transformation induced plasticity (TRIP) stainless steel by using sharp indentation at nanometric length scale.
Joan Josep Roa   +4 more
doaj   +1 more source

Ceramic Particle‐Reinforced Medium‐Entropy Alloys With Outstanding Mechanical Properties Prepared by Novel Micro‐LPBF

open access: yesAdvanced Functional Materials, EarlyView.
An innovative medium entropy alloy (MEA) composite material was fabricated via micro laser powder bed fusion (μ‐LPBF) with appropriate nano‐ceramic particles doping and exhibited markedly improved overall performance, including synergistically enhanced strength and ductility, increased hardness and compressive strength, improved wear resistance and ...
Zhonglin Shen, Mingwang Fu
wiley   +1 more source

Broadband Transition from Microstrip Line to Waveguide Using a Radial Probe and Extended GND Planes for Millimeter-Wave Applications

open access: yes, 2016
A broadband microstrip line-to-waveguide (MSL-to-WG) transition is developed for E-band applications. In order to achieve a sufficient and broadband coupling between the microstrip line (MSL) and waveguide (WG), a radial electric probe at the end of the ...
A. Ariffin, D. Isa, A. Malekmohammadi
semanticscholar   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Investigation of size effect on flow stress of Cu-3wt.%Ag-0.5 wt%Zr thin sheets at room and cryogenic temperature based on geometrically necessary dislocation evolution behavior

open access: yesJournal of Materials Research and Technology
The influence of the grain sizes ranging from 23.4 to 69.2 μm on mechanical properties of Cu-3wt.%Ag-0.5 wt%Zr thin sheets was investigated by conducting uniaxial tensile experiments at room temperature (RT 298 K) and cryogenic temperature (CT 77 K).
Han Wang   +4 more
doaj   +1 more source

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