Results 1 to 10 of about 21,870 (244)
A PLANAR n⁺ –n–n⁺ GaAs DIODE WITH GaInAs-BASED GRADED-GAP ACTIVE SIDE BOUNDARYN [PDF]
Radio Physics and Radio AstronomySubject and Purpose. The generation of millimeter-wave oscillations by a planar GaAs diode with active side boundary (ASB) is considered. The diode structure is placed on a semiconductor semi-insulating substrate and represents a GaAs channel ...
V. O. Zozulia +2 more
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TERAHERTZ OSCILLATIONS IN InN GUNN DIODES WITH AN ACTIVE REGION LENGTH OF 1 μm AND WITH A GRADED GaInN LAYER [PDF]
Radio Physics and Radio Astronomy, 2022 Subject and Purpose. The InN Gunn diode is known as the device capable of generating powerful oscillations atfrequencies above 300 GHz. A possible way for increasing both the microwave power and the cutoff frequency of the Gunn diode is to employ graded ...
I. P. Storozhenko, S. I. Sanin
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Advances in Condensed Matter Physics, 2021 Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt.
A. S. Saidov +7 more
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AlGaInAs GRADED-DAP GUNN DIODE [PDF]
Радиофизика и электроника, 2016 Gunn diodes are the active elements for generating electromagnetic waves in the millimeter range. An urgent task of today is to increase their cutoff frequency and output power. One of the ways to do it is to use graded-gap semiconductors.
I. P. Storozhenko, М. V. Kaydash
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The modelling and simulation of perovskite solar cell consisting textile-based electrodes
Results in Surfaces and Interfaces, 2023 Perovskite solar cell (PSC) consisting textile-based electrodes has been created novel features for future energy supply. Recently, Cs0.05(FA0.85MA0.15)0.95Pb(I0.85Br0.15)3 perovskite has appeared as a favourable candidate for flexible perovskite solar ...
A. Rismanchi +2 more
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STATIC DOMAIN IN DEVICE WITH INTERVALLEY ELECTRON TRANSFER ON THE BASIS OF VARIBAND AlGaAs [PDF]
Радиофизика и электроника, 2015 The use of variband semiconductors in uniformly doped devices with the effect of intervalley electron transfer can lead to the appearance of a static electric domain.
I. P. Storozhenko
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Science and Technology of Advanced Materials, 2022 The band structures and band gap energies, Eg, of passive films formed on titanium (Ti) in simulated bioliquids, Hanks’ solution (Hanks) and saline, were evaluated. Ti was polarized at 0, −0.1, and −0.2 VAg/AgCl, Ef, for 1 h.
Seong-Cheol Kim +4 more
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Features of impact ionization occuring in semiconductor compaunds InGaN and InAlN
Вісник Харківського національногоуніверситету імені В.Н. Каразіна. Серія: Радіофізика та електроніка, 2021 Background. The unique spectral position of terahertz range determines the difficulties of developing compact solid-state sources of terahertz radiation.
K. H. Prykhodko +2 more
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Graded-gap semiconductors and their application
Technology audit and production reserves, 2013 In graded-gap semiconductors spatial dependence of energy gap leads to quasi-electrical embedded layers of different size for holes and electrons, respectively alter their mobility. This results in diffusion-drift mechanism of transfer of alignment-grown carriers, change of coordinate distribution of concentrations, changing of conditions in the ...
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Nanomaterials, 2018 The synthesis of alloyed semiconductor quantum dots has produced structures that have distinct properties in comparison with both their bulk counterparts and their parent binary semiconductor quantum dots. In this work, the quantum confined structures of
S. Wageh +3 more
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