Results 1 to 10 of about 972 (218)
Fabrication and Characterisation of GaAs Gunn Diode Chips for Applications at 77 GHz in Automotive Industry [PDF]
Sensors, 2006 GaAs-based Gunn diodes with graded AlGaAs hot electron injectorheterostructures have been developed under the special needs in automotive applications.The fabrication of the Gunn diode chips was based on total substrate removal andprocessing of ...
Hans Lüth +4 more
exaly +5 more sources
Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode [PDF]
Micromachines, 2020 In this paper, a novel gallium nitride (GaN)-based heterostructure Gunn diode is proposed for the first time to enhance the output characteristics of Gunn oscillation waveforms.
Ying Wang +3 more
doaj +3 more sources
InGaAs-based Gunn light emitting diode
Materials Science in Semiconductor Processing, 2023 Acknowledgments This work is supported by TUBITAK (Project number: 120F062) and the Scientific Research Projects Coordination Unit of Istanbul University (Project Numbers: FYL-2022-38329 and FBG-2022-38573) .
G Kalyon, S Mutlu, Furkan Kuruoglu
exaly +7 more sources
AlGaInAs GRADED-DAP GUNN DIODE [PDF]
Радиофизика и электроника, 2016 Gunn diodes are the active elements for generating electromagnetic waves in the millimeter range. An urgent task of today is to increase their cutoff frequency and output power. One of the ways to do it is to use graded-gap semiconductors.
I. P. Storozhenko, М. V. Kaydash
doaj +2 more sources
TERAHERTZ OSCILLATIONS IN InN GUNN DIODES WITH AN ACTIVE REGION LENGTH OF 1 μm AND WITH A GRADED GaInN LAYER [PDF]
Radio Physics and Radio Astronomy, 2022 Subject and Purpose. The InN Gunn diode is known as the device capable of generating powerful oscillations atfrequencies above 300 GHz. A possible way for increasing both the microwave power and the cutoff frequency of the Gunn diode is to employ graded ...
I. P. Storozhenko, S. I. Sanin
doaj +1 more source
The phase stability of nanosecond Gunn oscillators [PDF]
Vojnotehnički Glasnik, 2022 Introduction/purpose: Detailed theoretical and experimental studies have been carried out in order to investigate the problem of a phase stability in electrodynamically uncoupled Gunn oscillators.
Vasily Y. Kozhevnikov +3 more
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Enhanced InP-based Gunn Diodes with Notch-d-doped Structure for Low-THz Applications
Journal of Engineering Technology and Applied Physics, 2023 In this work, Monte Carlo simulation is performed for InP Gunn diode with a notch-d-doped structure. It is found that the presence of the d-doped layer has improved the Gunn diode performance significantly as compared to the conventional notch structure.
Amiera Mohd Akhbar +2 more
doaj +1 more source
The impact of doping on the efficiency of GaAs –diode with active graded GaInAs side border
Вісник Харківського національногоуніверситету імені В.Н. Каразіна. Серія: Радіофізика та електроніка, 2023 Background. The development of modern communication, security, and medical systems requires compact terahertz radiation sources that can operate under normal conditions.
V. O. Zozulia +2 more
doaj +1 more source
Notch-δ-doped InP Gunn diodes for low-THz band applications
Journal of Electronic Science and Technology, 2023 The viability of the indium phosphide (InP) Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling. The presence of the δ-doped layer could enhance the current harmonic amplitude
Duu Sheng Ong +2 more
doaj +1 more source
Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies
IEEE Access, 2020 For the first time, Gallium Nitride(GaN)-based Gunn diodes with side-contact and fieldplate technologies were fabricated and measured with reliable characteristics.
Ahid S. Hajo +4 more
doaj +1 more source