Results 41 to 50 of about 972 (218)
Fabrication of submicron planar Gunn diode [PDF]
, 2014 We present, for the first time, the fabrication process for a submicron planar Gunn diode in In<sub>0.53</sub>Ga<sub>0.47</sub>As on an InP substrate operating at 265 GHz.
Ata Khalid +9 more
core +1 more source
Electronics Letters, 1968 Gunn diodes exhibit current noise which is almost independent of whether the diode is oscillating. The current noise has a flicker characteristic, and fluctuations in the current are correlated with fluctuations in the frequency of the oscillator.
E.A. Faulkner, M.L. Meade
openaire +1 more source
Quasioptical millimeter wave solid-state generator [PDF]
Радиофизика и электроника, 2018 Subject and purpose. Open resonant system as the oscillating circuit of the solid-state oscillators and characteristics of the quasi-optical oscillators properly are the object of investigations.
O. I. Bilous +5 more
doaj +1 more source
Flexible terahertz optics: light beam profile engineering via C-shaped metallic metasurface
Frontiers in Physics, 2023 The potential of terahertz (THz) imaging implementation in a large variety of applications requires compact, reliable, and relatively low-cost solutions in systems constituents. Here we focus on the development of passive optical elements and demonstrate
Rusnė Ivaškevičiūtė-Povilauskienė +10 more
doaj +1 more source
Hot electron injector Gunn diode for advanced driver assistance systems
, 2007 This paper reviews the main aspects of the design, fabrication and characterization of GaAs Gunn diodes intended to be used in advanced driver assistance systems. The corresponding Gunn diode based oscillators operate at the microwave frequency of 77 GHz
Förster, A. +4 more
core +1 more source
Failure mechanisms in Gunn diodes
Electronics Letters, 1967 Observations on electrical properties of planar Gunn diodes and on failure mechanisms using Sn–Ag and In–Au contacts are reported. A conducting channel of Sn(In) is proved to be responsible for the final catastrophic failure. Excess heat is generated at the anode, where also the breakdown is observed to start.
B. Jeppsson, I. Marklund
openaire +1 more source
Advanced Energy and Sustainability Research, Volume 5, Issue 11, November 2024.Clean energy is central to global energy developments, driven by sustainability needs and advancements in 5G and Internet of Things (IoT). Vibration energy harvesting, converting vibrational energy into electricity, supports IoT expansions and integrates with AI‐enhanced sensors for improved environmental monitoring, intelligent transportation, and ...
Yunfei Li +5 more
wiley +1 more source
STATIC DOMAIN IN DEVICE WITH INTERVALLEY ELECTRON TRANSFER ON THE BASIS OF VARIBAND AlGaAs [PDF]
Радиофизика и электроника, 2015 The use of variband semiconductors in uniformly doped devices with the effect of intervalley electron transfer can lead to the appearance of a static electric domain.
I. P. Storozhenko
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Advanced Gunn diode as high power terahertz source for a millimetre wave high power multiplier
, 2009 An advanced step-graded Gunn diode is reported, which has been developed through joint modelling-experimental work. The ~ 200 GHz fundamental frequency devices have been realized to test GaAs based Gunn oscillators at sub-millimetre wave for use as a ...
Missous, M.; id_orcid +4 more
core +1 more source
THE RESONANT SYSTEM OF A SUB-TERAHERTZ LOCAL OSCILLATOR
Radio Physics and Radio Astronomy, 2022 Purpose. The excitation efficiency is investigated of the first higher-order axially asymmetric oscillation mode (TEM10q) excited in a hemispherical open resonator (OR) at the frequencies of the fundamental and second-order harmonics of the Gunn diode in
I. K. KUZMICHEV +4 more
doaj +1 more source