Results 51 to 60 of about 972 (218)

Noise in Gunn-oscillators depending on surface of Gunn diode

open access: yesElectronics Letters, 1970
By chemical treatment of the surface of the Gunn element, the f.m. and a.m. noise can be improved. A possible explanation is given. For this case, traps on the surface exist and McWhorter's model is applied.
openaire   +1 more source

Brightly Luminescent and Color‐Tunable CsPbBr3 Nanocrystals with Enhanced Stability and Room Temperature Cubic Structure through Codoping with MnCl2

open access: yesAdvanced Engineering Materials, Volume 26, Issue 18, September 2024.
Lead halide perovskites have recently attracted much attention . Nevertheless, their stability and lead toxicity have remained a problem. Herein, the potential of manganese doping to offer better stability and replace a fraction of the toxic lead ions is investigated.
Elshaimaa Darwish   +10 more
wiley   +1 more source

Autodyne characteristics of stabilized UHF-oscillators at a strong reflected signal [PDF]

open access: yesТехнологія та конструювання в електронній апаратурі, 2011
Calculations and examinations of phase, amplitude, frequency and amplitude-frequency characteristics are fulfilled for the autodyne system stabilized by the external high-Q cavity as well as spectral characteristics under condition of exact and non-exact
V. Ya. Noskov   +2 more
doaj   +1 more source

A Memristive Oscillator

open access: yesAdvanced Physics Research, Volume 3, Issue 4, April 2024.
A new memristor based on a bilayer‐type nickel‐dithiolene complex is revealed. It finds that the memristor shows hybrid electrical properties such as the negative differential resistance and inductive reactance owing to the “pinched hysteresis loop” of a memristor.
Yugo Oshima   +6 more
wiley   +1 more source

A Genuine Trivalent Bis‐Acylphosphide (BAP) Complex of Uranium

open access: yesEuropean Journal of Inorganic Chemistry, Volume 27, Issue 6, February 21, 2024.
A trivalent uranium complex, K[UIII(mesBAP)4], has been synthesized and spectroscopically, electrochemically, and magnetochemically characterized. An X‐ray diffraction analysis on single‐crystals of [K(2.2.2‐crypt)][UIII(mesBAP)4] reveals the molecular structure, consisting of four bis(acyl)phosphide chelates coordinated to the electron‐rich uranium ...
Jakob Hochholzer   +4 more
wiley   +1 more source

Simulation and fabrication of InGaAs planar Gunn diode on InP substrate

open access: yes, 2013
This paper describes the simulation and fabrication of the first planar Gunn diode based on InGaAs on InP substrate. Gunn devices were simulated using the Sentaurus Device software.
Li, C.   +7 more
core   +2 more sources

Early in vivo detection of denervation‐induced atrophy by luminescence transient nanothermometry

open access: yesJournal of Biophotonics, Volume 17, Issue 2, February 2024.
Infrared‐emitting nanothermometers in combination with transient thermometry allows for early detection of muscle atrophy caused by denervation. Abstract Denervation induces skeletal muscle atrophy due to the loss of control and feedback with the nervous system. Unfortunately, muscle atrophy only becomes evident days after the denervation event when it
José Lifante   +13 more
wiley   +1 more source

Mutual phase locking of a coupled laser diode-Gunn diode pair [PDF]

open access: yes, 1984
Mutual phase locking has been achieved through series connection of a semiconductor laser and a Gunn diode oscillator. Experimental results obtained demonstrate a mutual interaction between the two oscillators which results in a short term Gunn diode ...
Mukai, S.   +4 more
core  

Physical processes in Gunn diode and energy balance

open access: yesҚарағанды университетінің хабаршысы. Физика сериясы, 2017
In article the physical processes happening in Gunn diode which is under the influence of strength electric field exceeding threshold value are analyzed.
L.V. Chirkova   +5 more
doaj  

Design,characterization and fabrication of an In0.53Ga0.47As planar Gunn diode operating at millimeter waves

open access: yes, 2015
This paper describes the design, characterization and fabrication of a planar In0.53Ga0.47 As based planar Gunn diode on an In P semi-insulating substrate. The planar Gunn diode was designed in Coplanar Waveguide(CPW) format with an active channel length
Oxley, C.H.   +3 more
core   +1 more source

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