Results 61 to 70 of about 972 (218)
Dynamic elastance of a Gunn diode
Electronics Letters, 1969 The time-varying elastance of a Gunn diode is deduced by the application of a simple domain-growth and decay model. The time variation of the elastance is seen to be significantly different from the previously assumed ideal pulsed nature.
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Solid-state pulsed microwave bridge for electron spin echo spectrometers of 8-mm wavelength range [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012 The article presents a construction of a coherent pulsed microwave bridge with an output power up to 10 Wt with a time resolution of 10–8 seconds at a pulse repetition rate of 1 kHz designed for electron spin echo spectrometers.
Kalabukhova E. N. +5 more
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Gunn diode modelling through a new load-pull characterization method [PDF]
, 1998 This paper presents a very efficient Gunn diode circuit model whose components are determined by a new method of large signal characterization which requires much less power from the generator than classical techniques.
Bourreau, Daniel +11 more
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InP Gunn diodes with a cathode contact injecting hot electrons. Part 1. Interactions between phases in the cathode contacts [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2010 The article presents the research on interactions between phases in the Ge–Au, Ge–TiBx and Au–TiBxAu contacts to n–n+–n++-InP, both before and after rapid thermal annealing, and also the output parameters of Gunn diodes based on the InP structure with Au–
Boltovets N. S. +10 more
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IEEE Journal of the Electron Devices Society, 2020 GaN-based planar Gunn diodes are promising terahertz sources for monolithic microwave and terahertz integrated circuits (MMICs and MTICs, respectively) due to high output power and easiness of fabrication and circuit integration.
Ying Wang +5 more
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Gunn diodes from GaAs with the cathode contact by injecting hot electrons
Технологія та конструювання в електронній апаратурі, 2007 Gunn diodes made of GaAs with a cathode contact AuGe–TiB2–Au that injects hot electrons have been developed. The Gunn diodes operate in the frequency range from 17.44 to 78.0 GHz with efficiencies from 8% to 4%, respectively.
V. N. Ivanov +2 more
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X band Gunn oscillators triggered by baseband Gunn diodes
Electronics Letters, 1970 A 155 μm-long Gunn diode produces output pulses of 1.5 V amplitude in resistive loading. These pulses are used to trigger a transistor multivibrator and an X band Gunn oscillator.
W. Fallmann +2 more
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Electronically tuned 23 GHz Gunn oscillators for a microwave datalink
, 1988 Includes bibliographical references.A market has been identified for 23 GHz, short-haul, low-capacity, digital radio. The dissertation presents the development of the varactor controlled Gunn oscillators that constitute the crystal locked microwave ...
Kratzenstein, L
core
Fabrication of integrated planar gunn diode and micro-cooler on GaAs substrate [PDF]
, 2013 We demonstrate fabrication of an integrated micro cooler with the planar Gunn diode and characterise its performance. First experimental results have shown a small cooling at the surface of the micro cooler.
Hopper, R. +9 more
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Gunn oscillations in GaN channels [PDF]
, 2004 Date of Conference: 21 July-1 August 2003Conference Name: 13th International Conference on Nonequilibrium Carrier Dynamics in SemiconductorsGallium nitride with its high negative differential mobility threshold is an appealing material for high power ...
Bulutay, Ceyhun, Sevik, Cem
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