Results 81 to 90 of about 972 (218)
InP Gunn Diodes with Current Limiting Contact for High Efficiency Gunn Oscillators
We fabricated and examined current limiting effect for InP Gunn diodes with stable depletion layer mode operation of diodes for high efficiency Gunn oscillators. Current limiting at the cathode was achieved by a shallow Schottky barrier at the interface.
Mi-Ra Kim +5 more
openaire +1 more source
The higt stable microwave generator module for hige-speed systems
A design synthesis and experimental investigation of a two-diode generator module based on Gunn diodes in the centimeter wavelength range, incorporating a stabilizing reference cylindrical resonator, have been carried out.
S. V. Plaksin +2 more
doaj
Signals of Autodyne Sensors with Sinusoidal Frequency Modulation [PDF]
Research results of signal formation features of the autodyne sensor (AS) with sinusoidal frequency modulation (FM) are presented. Expressions for low frequency information signals are given and their numerical analysis is performed for cases when signal
V. Ya. Noskov +5 more
doaj
Stabilized biharmonic Gunn-diode oscillator
A biharmonic 3-cm-band Gunn-diode oscillator with second harmonic frequency stabilization by an external high-Q resonator is described and test results are given.
Buzykin, V. T. +2 more
core +1 more source
An electrical equivalent circuit to simulate the output power of an AlGaAs/GaAs planar Gunn diode
The planar Gunn diode offers the potential of microwave, milli-metric and THz based oscillator which can be fabricated as part of a microwave monolithic integrated circuit (mmic). To-date the RF output power has been too low for many applications.
Oxley, Chris H. +10 more
core +1 more source
The design of the main units and elements of autodyne oscillators in hybrid integrated implementation and the technology of their fabrication are considered.
S. D. Votoropin
doaj
Oscillations in GaN Diode with 2D-h-BN – Layer
In this research, we have investigated the operation of a hybrid 2D-3D heterostructure diode in the Gunn-like oscillation mode. The diode is represented as a GaN-based structure containing n-type channel on a sapphire substrate with the hexagonal boron ...
V.O. Zozulia +4 more
doaj +1 more source
2D semiconductor structures as a basis for new high-tech devices (Review)
In this article, we present a short overview of the Ukrainian contribution into physics of 2D semiconductor structures as a basis for high-tech devices of modern nanoelectronics together with some new results in this field.
D.V. Korbutyak +2 more
doaj +1 more source
Design and Performance of Extraordinary Low-Cost Compact Terahertz Imaging System Based on Electronic Components and Paraffin Wax Optics. [PDF]
Tamošiūnas V +5 more
europepmc +1 more source
Terahertz oscillations in an In0.53Ga0.47As submicron planar gunn diode [PDF]
The length of the transit region of a Gunn diode determines the natural frequency at which it operates in fundamental mode – the shorter the device, the higher the frequency of operation. The long-held view on Gunn diode design is that for a functioning
D. Macintyre +37 more
core +1 more source

