Results 91 to 100 of about 972 (218)

Harmonic Enhancement of Terahertz GaN Planar Gunn Oscillators With Multiple Gates

IEEE Journal of the Electron Devices Society
In this paper, we propose a novel design of GaN-based planar Gunn oscillator as terahertz signal source. The oscillator has multiple gates and each gate can be individually biased.
Ying Wang, Shuai Hui, Yu-Xin Fu, Yuan-Zhu Xia, He Guan   +4 more
doaj   +1 more source

LOCAL OSCILLATORS FOR MM-WAVELENGTH AERONOMIC RECEIVERS

Radio Physics and Radio Astronomy, 2019
Purpose: A description of the original technical solutions of the solid-state highly stable local oscillators of the millimeter range and the results of the study of the main characteristics of the developed devices are given. The goal of the work is the
V. V. Myshenko, V. M. Shulga, A. M. Korolev, Yu. V. Karelin, D. L. Chechotkin, O. V. Antyufeyev, O. M. Patoka   +6 more
doaj   +1 more source

Signals Features from Distributed Targets of Autodyne SRR with Simultaneous Pulse Amplitude and Linear Frequency Modulations

Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ, 2017
A mathematical model for signals description of the autodyne short-range radar (ASRR) with the simultaneous pulse amplitude modulation (PAM) and the linear frequency modulation (FM) is considered.
V. Ya. Noskov, K. A. Ignatkov, A. P. Chupahin, A. S. Vasiliev, A. V. Fateev, S. M. Smolskiy   +5 more
doaj   +1 more source

A novel n-type semiconducting biomaterial. [PDF]

Sci Rep, 2022
Fukuhara M, Yokotsuka T, Hashida T, Ogawa F, Sakamoto T, Takeda M, Arai S.   +6 more
europepmc   +1 more source

Gunn diode

, 2010
A Gunn diode includes an active layer having a top and a bottom, a first contact layer disposed adjacent to the top of the active layer, a second contact layer disposed adjacent to the bottom of the active layer, wherein the first and second contact ...
Pavlidis, Dimitris, Yilmazoglu, Oktay, Mutamba, Kabula, Karduman, Tamer   +3 more
core  

UEG Week 2024 Poster Presentations

United European Gastroenterology Journal, Volume 12, Issue S8, Page 665-1360, October 2024.
wiley   +1 more source

Novel planar Gunn diode operating in fundamental mode up to 158 GHz

, 2009
We show the experimental realisation of fundamental mode operation of planar Gunn diode structures fabricated in GaAs/AlGaAs quantum wells. The electron density in the active channel is enhanced by positioning double delta-doping layers on either side ...
Li, C., Pilgrim, N., Khalid, A., Holland, M.C., Cumming, D.R.S., Dunn, G.   +5 more
core   +1 more source

Physical-technological of producing GaAs Gunn diodes operating in the range of short millimeter wave lengths

Технологія та конструювання в електронній апаратурі, 2006
An AuGe–TiB2–Au contact to gallium arsenide has been developed, possessing the property of injecting hot electrons. The barrier height is 0.25 eV for GaAs with a carrier concentration of (0.3–1)·1016 cm–3.
V. N. Ivanov, V. M. Kovtonyuk, Yu. E. Nikolaienko   +2 more
doaj  

Development of the design and manufacturing technology for Gunn diodes for EHF therapy

Технологія та конструювання в електронній апаратурі, 2004
The design and fabrication technology of Gunn diodes for use in EHF therapy are described. The operating frequency is 42 GHz, with an output power of over 1 mW at an operating current of less than 120 mA.
V. N. Ivanov, V. M. Kovtonjuk, N. S. Raevskaya   +2 more
doaj  

Second Harmonic Extraction of Planar Gunn Diode by Using Resonators for Mill Metric Wave Applications

, 2014
Indium gallium arsenide (InGaAs) planar Gunn diodes with on chip matching circuits were fabricated on a semi-insulating Indium phosphides (InP) substrate.
Oxley, C.H., Maricar, Mohamed Ismaeel, Khalid, Ata, Cumming, D.R.S.   +3 more
core