Results 71 to 80 of about 21,870 (244)
Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
Advanced Materials, EarlyView.The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source
Semiconductor optical amplifier optical gate with graded strained bulk-like active structure
, 2003 A novel semiconductor optical amplifier (SOA) optical gate with a graded strained bulk-like active structure is proposed. A fiber-to-fiber gain of 10 dB when the coupling loss reaches 7 dB/factet and a polarization insensitivity of less than 0.9 dB for ...
Shu HY +9 more
core
Electrically Readable Lateral Flow Assay Using Organic Transistors for Diagnostic Applications
Advanced Materials, EarlyView.Electrolyte‐gated organic field‐effect transistors (EGOFETs) are integrated with lateral flow (LF) paper fluidics to create a reusable, portable, and low‐cost point‐of‐care (PoC) diagnostic test. The devices are validated for Human Immunoglobulin G detection, achieving high sensitivity (0.1 fm), selectivity, and reproducibility with rapid results in 20–
María Jesús Ortiz‐Aguayo +4 more
wiley +1 more source
Graded Band-Gap Formation Semiconductor Single Grystal by Laser Radiation
According to the effect, the interstitial atoms of Cd (Cdi) in Cd1-xZnxTe move along the tempera-ture gradient while the Cd vacancies (VCd) and Zn atoms – in the opposite direction, into the bulk of the semiconductor where temperature is lower ...
Barloti, Jānis +2 more
core
Hard gap in epitaxial semiconductor–superconductor nanowires
, 2015 Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices.
C. M. Marcus +13 more
core +1 more source
Advanced Materials, EarlyView.Ordered three‐dimensional anodic aluminum oxide (3D‐AAO) nanoarchitectures with longitudinal and transverse pores enable architecture‐driven metamaterials. The review maps fabrication advances, including hybrid pulse anodization, and shows how 3D‐AAO templates tailor properties across magnetism, energy, catalysis, and sensing.
Marisol Martín‐González
wiley +1 more source
VLSI Revisited - Revival in Japan [PDF]
This paper describes the abundance of semiconductor consortia that have come into existence in Japan since the mid-1990s. They clearly reflect the ambition of the government - through its reorganized ministry METI and company initiatives - to regain some
Sigurdson, Jon
core +2 more sources
Formation of Graded Band-Gap in CdZnTe byYAG:Nd Laser Radiation
A mechanism of formation of graded band-gap based on thermogradient effect (TGE) is proposed in Cd1−xZnxTe at irradiation by second harmonic of a Q-switchedYAG:Nd laser. According to the effect, the interstitial atoms of Cd (Cdi) in Cd1−xZnxTe move along
Korbutjak, B. +5 more
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High resolution laser diagnostics for direct gap semiconductor materials
The laser-induced luminescence of direct gap semiconductors can be measured with high spatial (1 μm) and temporal (<1 ns) resolution. A profiling technique is described for in-situ measurements during laser processing.
Gilgen, H. H., Salathe, R. P.
core +1 more source
Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors
Advanced Materials, EarlyView.A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi +11 more
wiley +1 more source