Results 171 to 180 of about 418,101 (293)
Carotenoids in Cereal Food Crops: Composition and Retention throughout Grain Storage and Food Processing. [PDF]
Trono D.
europepmc +1 more source
Ultrathin AlOxHy interlayers between aluminum films and polymer substrates significantly improve electro‐mechanical properties of flexible thin film systems. By precisely controlling interlayer thickness using atomic layer deposition, this study identifies an optimal interlayer thickness of 5–10 nm that enhances ductility and delays cracking.
Johanna Byloff +9 more
wiley +1 more source
Increasing the Oxygen Consumption in Hermetic Grain Storage Using Grain Weevils (Sitophilus granarius). [PDF]
Müller-Blenkle C, Adler CS.
europepmc +1 more source
Mapping Nanoscale Buckling in Atomically Thin Cr2Ge2Te6
Atomic‐resolution STEM is used to resolve nanoscale buckling in monolayer Cr2Ge2Te₆. A noise‐robust image analysis reconstructs three‐dimensional lattice distortions from single plan‐view images, revealing pronounced defect‐driven nm‐scale out‐of‐plane buckling.
Amy Carl +20 more
wiley +1 more source
Grain storage temperature prediction based on chaos and enhanced RBF neural network. [PDF]
Sun F, Gong C, Lyu Z.
europepmc +1 more source
Regulation of nitrogen availability results in changes in grain protein content and grain storage subproteomes in barley (Hordeum vulgare L.). [PDF]
Guo B +6 more
europepmc +1 more source
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda +11 more
wiley +1 more source
A Design Method for an SVM-Based Humidity Sensor for Grain Storage. [PDF]
Liu L, Song C, Zhu K, Liu P.
europepmc +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source

