Results 171 to 180 of about 120,854 (314)

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

open access: yesAdvanced Electronic Materials, EarlyView.
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis   +13 more
wiley   +1 more source

Machine learning models for crude protein prediction in Tamani grass pastures. [PDF]

open access: yesSci Rep
Oliveira de Aquino Monteiro G   +12 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

open access: yesAdvanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim   +4 more
wiley   +1 more source

Performance Enhancement in Hafnium Oxide Through Homogeneous and Heterogeneous co‐Doping Strategies

open access: yesAdvanced Electronic Materials, EarlyView.
This article presents a comprehensive co‐doping toolkit to optimize the performance and reliability of fluorite‐structure ferroelectrics like hafnium oxide. By employing homogeneous and heterogeneous co‐doping strategies, precise control over crystallization behavior, polarization hysteresis, and oxygen vacancy distribution is achieved.
Shouzhuo Yang   +10 more
wiley   +1 more source

Effects of stocking rate on the state transition processes of plant community in desert steppe. [PDF]

open access: yesBMC Plant Biol
Lv S   +9 more
europepmc   +1 more source

Role of Rare‐Earth Lanthanum Doping on Electrical Performance and Stability of Atomic Layer Deposition Processed Indium Oxide Thin‐Film Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
The work demonstrates La doping in In2O3 via ALD super‐cycles. The strong La─O bond suppresses oxygen vacancies, resulting in a decrease in mobility and a positive shift in threshold voltage. The effective suppression of VO decreases oxygen‐related defects under gate bias, leading to exceptional negative bias stability.
Jinxiu Zhao   +6 more
wiley   +1 more source

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