Results 161 to 170 of about 518,939 (305)

Helical Electron Beam Micro‐Bunching by High‐Order Modes in a Micro‐Plasma Waveguide

open access: yesAdvanced Science, EarlyView.
ABSTRACT Electron acceleration by a high‐power Laguerre‐Gaussian pulse in a micro‐plasma waveguide is investigated. When the incident laser travels in the waveguide, electrons on the wall are extracted into the vacuum core and accelerated by the longitudinal field of the waveguide mode.
Xingju Guo, Longqing Yi
wiley   +1 more source

Solution‐Shearing of Highly Smooth Ion‐Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion‐Gated Organic Field Effect Transistors

open access: yesAdvanced Electronic Materials, Volume 11, Issue 6, May 2025.
A straightforward method is introduced to produce ion‐gel films with very low surface roughness by employing a solution‐shearing coating process. These ion‐gel films permit the growth of crystalline thin films of various small molecule organic semiconductor molecules directly on top of the ion‐gel layer, thereby enabling “inverted” small molecule ...
Jonathan Perez Andrade   +10 more
wiley   +1 more source

Conformal Reconfigurable Intelligent Surfaces: A Cylindrical Geometry Perspective

open access: yesAdvanced Electronic Materials, EarlyView.
Cylindrical reconfigurable intelligent surfaces are explored for low‐complexity beam steering using one‐bit meta‐atoms. A multi‐level modeling approach, including optimization‐based synthesis, demonstrates that even minimal hardware can support directive scattering.
Filippo Pepe   +4 more
wiley   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

open access: yesAdvanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim   +4 more
wiley   +1 more source

High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

open access: yesAdvanced Electronic Materials, EarlyView.
We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun   +10 more
wiley   +1 more source

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