Results 171 to 180 of about 2,466 (262)

Molecular Sieve Promoted Growth of Ferroelectric Trilayer 3R‐MoS2 for Polarization‐Dependent Reconfigurable Optoelectronic Synapses

open access: yesAdvanced Science, EarlyView.
The noncentrosymmetric trilayer rhombohedral‐stacked MoS2 nanoflakes with enhanced sliding ferroelectric properties are synthesized via a molecular sieve‐assisted chemical vapor deposition process. The switchable polarization states, combined with the exceptional light/gate voltage modulated electrical properties of these nanoflakes, enable broadband ...
Qichao Xue   +11 more
wiley   +1 more source

Emerging Advanced Electronic Packaging Materials for Thermal Management in Power Electronics

open access: yesAdvanced Science, EarlyView.
This review surveys emerging materials for thermal management in advanced electronic packaging, with emphasis on ceramic substrates and thermal interface materials. Multiscale simulations and mechanistic analyses are highlighted, alongside the emerging role of artificial intelligence in predicting thermal properties and guiding design, offering ...
Yongjun Huo   +11 more
wiley   +1 more source

Harnessing Phase Separation for the Development of High‐Performance Hydrogels

open access: yesAdvanced Science, EarlyView.
ABSTRACT Hydrogels are indispensable for the development of next‐generation bioelectronics, soft robotics, and biomedical devices, where their mechanical properties determine performance and reliability. Among strategies to enhance hydrogel mechanics, phase separation enables controlled heterogeneity resulting in gel networks that are reinforced by ...
Yue Shao   +3 more
wiley   +1 more source

Thermoelectric Properties of a Family of Benzodifuranone‐Based Conjugated Copolymers in Oriented Thin Films Doped Sequentially With NDMBI‐H

open access: yesAdvanced Electronic Materials, EarlyView.
Combining high polymer orientation of n‐type copolymers by temperature rubbing and sequential doping with N‐DMBI results in a strong improvement of electrical conductivity and thermoelectric power factors reaching up to 9.8 ± 1.6 S cm−1 and 8 ± 3 µW m−1.K2, respectively.
Shubhradip Guchait   +7 more
wiley   +1 more source

Diffusion Characteristics of Ru and Oxygen Vacancies in Ta2O5 for Resistive Random Access Memory Devices: A Density Functional Theory Investigation

open access: yesAdvanced Electronic Materials, EarlyView.
Atomistic analysis of ruthenium (Ru) and oxygen vacancy (OV) diffusion in Ta₂O₅‐based memristors is performed. DFT calculations demonstrate interstitial Ru in Ta₂O₅ has lower diffusion barriers and formation energies than OVs, enhancing mobility and stability.
Md. Sherajul Islam   +3 more
wiley   +1 more source

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