Halogen-Free Anisotropic Atomic-Layer Etching of HfO<sub>2</sub> at Room Temperature. [PDF]
Hsiao SN +5 more
europepmc +1 more source
Programming pulse width dependent charge retention characteristics of low-power synaptic thin film transistors. [PDF]
Cha D, Pi J, Lee S.
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Controlling the Digital to Analog and Multilevel Switching in Memristors Based on Zr-Doped HfO<sub>2</sub> by Interface Engineering. [PDF]
Han C +8 more
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Results of phase Ib/II trial of PEP503 (NBTXR3, radioenhancer) with chemoradiotherapy in patients with rectal cancer. [PDF]
Huang CW +9 more
europepmc +1 more source
From Kinetics to Molecular-Level Insights into Group 4 Metal Oxide Nanocrystal Synthesis. [PDF]
Seno C +4 more
europepmc +1 more source
Engineered interfaces in indium-hafnium oxide catalysts unlock superior methanol productivity
Pérez-Ramírez J +15 more
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Auger parameter of hafnium in elemental hafnium and in hafnium oxide
Surface Science, 2004Abstract X-ray photoelectron spectroscopy has been used to determine the Auger parameters in elemental hafnium and in hafnium oxide (HfO2). The zirconium Lα line has been used as a source of excitation to study the 3d core levels of hafnium, the 1s core level of oxygen, and the X-ray excited MNN Auger region of hafnium and KVV Auger region of oxygen.
A.R. Chourasia, R.L. Miller
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Corrosion of Hafnium and Hafnium Alloys
2005Abstract This article describes the processes involved in the production of hafnium and its alloys. It discusses the physical, mechanical and chemical properties of hafnium. The aqueous corrosion testing of hafnium and its alloys is detailed. The article reviews the corrosion resistance of hafnium in specific media, namely, water, steam,
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