Results 91 to 100 of about 263,380 (266)

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Impact of Disorder on Microscopic Superconducting and Normal‐State Responses in a Kagome Metal

Advanced Functional Materials, EarlyView.
Using depth‐resolved, field‐ and pressure‐dependent μSR$\umu{\rm SR}$ measurements, we show that disorder in Ta‐doped KV3Sb5 drives a crossover from nodal to nodeless superconductivity while strongly modifying the normal‐state magnetic response. Our results reveal that disorder affects superconductivity and magnetism in fundamentally different ways ...
J. N. Graham, S. S. Islam, G. Janka, A. Doll, P. Král, O. Gerguri, J. A. Krieger, T. J. Hicken, X. Xu, X. Yan, H. Qin, Z. Salman, A. Suter, T. Prokscha, R. Thomale, H. Luetkens, R. Khasanov, J.‐X. Yin, Z. Guguchia   +18 more
wiley   +1 more source

Development of a Software Tool for Hall Parameter Evaluation in Semiconductor Structures

Engineering Proceedings
The Hall effect is widely used in magnetic field sensors and contactless measurement systems. Accurate modeling of Hall-effect elements is essential for optimizing performance, especially in high-sensitivity applications under controlled conditions like ...
Gergana Mironova, Goran Goranov
doaj   +1 more source

Skyrmion Hall Effect in Altermagnets

Physical Review Letters
It is widely believed that the skyrmion Hall effect is absent in antiferromagnets because of the vanishing topological charge. However, the Aharonov-Casher theory indicates the possibility of topological effects for neutral particles. In this work, we predict the skyrmion Hall effect in emerging altermagnets with zero net magnetization and zero ...
Zhejunyu Jin, Zhaozhuo Zeng, Yunshan Cao, Peng Yan   +3 more
openaire   +3 more sources

Nanoscale Spatial Tuning of Superconductivity in Cuprate Thin Films via Direct Laser Writing

Advanced Functional Materials, EarlyView.
Maskless direct laser writing enables local control of oxygen stoichiometry in epitaxial YBCO thin films under ambient conditions. Sub‐micrometer grayscale patterns with tunable optical response and superconducting transport properties are achieved.
Irene Biancardi, Valerio Levati, Jordi Alcalà, Thomas Günkel, Nicolas Lejeune, Riccardo Girelli, Alejandro V. Silhanek, Valeria Russo, Narcís Mestres, Daniela Petti, Anna Palau, Edoardo Albisetti   +11 more
wiley   +1 more source

Thermally Robust Spin–Orbit Torque Switching in Low‐Resistivity Mo‐Alloyed β‐W Heterostructures

Advanced Functional Materials, EarlyView.
Mo‐alloyed β‐W heterostructures exhibit enhanced spin‐orbit torque efficiency, reduced resistivity and switching current density, and reliable operation from −50 to +150°C. The optimized W87.3Mo12.7 device achieves high spin Hall conductivity with thermal robustness, highlighting its potential for energy‐efficient magnetic memory and automotive ...
Han Seok Ko, Hyun Ju Lee, Jeong Kyu Lee, Han Sol Kim, Min Seok Kim, Quynh Anh T. Nguyen, Sonny H. Rhim, Young Keun Kim   +7 more
wiley   +1 more source

Higher odd-order nonlinear Hall effect in magnetic topological insulator Mn(Bi1-x Sb x )2Te4

Nature Communications
The nonlinear Hall effect is a new member of the Hall effect family, which attracts intense research interests, and it is closely related to the quantum geometry of quantum materials.
Xiubing Li, Zheng Dai, Shuai Zhang, Heng Zhang, Congcong Li, Boyuan Wei, Fengyi Guo, Chunfeng Li, Fucong Fei, Minhao Zhang, Xuefeng Wang, Huaiqiang Wang, Fengqi Song   +12 more
doaj   +1 more source

Dopant Distribution in Ga‐Implanted CdO—A Correlative Microscopy and Molecular Dynamics Study

Advanced Functional Materials, EarlyView.
This work demonstrates that ion implantation offset angle could modulate carrier concentration and mobility in cadmium oxide thin films. Combining correlative microscopy workflow and molecular dynamics simulations, this study reveals the control of interfacial cluster density with tailoring implantation angles, and the optimum offset angle that ...
Morvarid Ghorbani, Bhaveshkumar Kamaliya, Maxwell J. Tolchin, Ryan W. Spangler, Youngji Kim, Joshua D. Caldwell, Jon‐Paul Maria, Nabil D. Bassim   +7 more
wiley   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Quantum Geometric Engineering of Dual Hall Effects in 2D Antiferromagnetic Bilayers via Interlayer Magnetic Coupling

Advanced Science
The interplay between quantum geometry and magnetic order offers a novel strategy for designing next‐generation nanodevices. Here, it is demonstrated that interlayer magnetic coupling in two‐dimensional (2D) CoPSe3 bilayers enables precise control over ...
Zhenning Sun, Tao Wang, Hao Jin, Xinru Li, Yadong Wei, Jian Wang   +5 more
doaj   +1 more source