Results 71 to 80 of about 10,643,801 (300)
Proceedings of the International Conference on Applied Innovations in ITIn this study, thin films of manganese oxide (Mn₃O₄) doped with nickel oxide (NiO) at different doping ratios (0, 1, 3, 5, and 7%) were prepared and deposited on glass slides at a temperature of 350°C using the chemical spray pyrolysis technique ...
Ali Younis Ibrahim +1 more
doaj +1 more source
THE QUANTUM HALL EFFECT IN GRAPHENE [PDF]
Modern Physics Letters B, 2012 We investigate the quantum Hall effect in graphene. We argue that in graphene in presence of an external magnetic field there is dynamical generation of mass by a rearrangement of the Dirac sea. We show that the mechanism breaks the lattice valley degeneracy only for the n = 0 Landau levels and leads to the new observed ν = ±1 quantum Hall plateaus ...
openaire +3 more sources
Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor
Advanced Functional Materials, EarlyView.Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben +6 more
wiley +1 more source
Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition
Advanced Functional Materials, EarlyView.An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen +5 more
wiley +1 more source
Spontaneous Hall effects in the electron system at the SmTiO3/EuTiO3 interface
APL Materials, 2018 Magnetotransport and magnetism of epitaxial SmTiO3/EuTiO3 heterostructures grown by molecular beam epitaxy are investigated. It is shown that the polar discontinuity at the interface introduces ∼3.9 × 1014 cm−2 carriers into the EuTiO3.
Kaveh Ahadi +2 more
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Advanced Functional Materials, EarlyView.A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon +9 more
wiley +1 more source
Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs
MicromachinesWe prepared AlGaN/GaN high electron mobility transistors (HEMTs) with GaN cap thicknesses of 0, 1, 3, and 5 nm and compared the material characteristics and device performances.
Zuorong Nie +3 more
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OBTAINING AND PROPERTIES OF AgInS2 FILMS
Юг России: экология, развитие, 2016 Aim. The aim is to obtain AgInS2 films and study their electrical and optical properties.Methods. The samples of thin AgInS2 films for measurement were obtained by the method of magnetron sputtering with direct current. The structure, phase and elemental
M. A. Abdullaev, D. A. Alkhasova
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Letter from James A. and Mary Hall to their parents, 9 October 1840
James Hall writes that he has 65-70 pupils in his school; he also writes of the subjects he is teaching.
Hall, Mary E., 1819-1893;
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Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices
Advanced Functional Materials, EarlyView.This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies +2 more
wiley +1 more source