Results 61 to 70 of about 263,380 (266)

Development of a mathematical model for a CdS-based photosensitive Hall sensor

Технологія та конструювання в електронній апаратурі
The paper proposes a mathematical model of a photosensitive Hall sensor based on a CdS single crystal which uses the internal photoelectric effect. The model describes the change in the concentration and mobility of charge carriers under the influence of
Viktor Sergiichuk, Ostap Oliinyk
doaj   +1 more source

An Effective Version of Hall's Theorem [PDF]

Proceedings of the American Mathematical Society, 1983
Manaster and Rosenstein [ 1972 ] constructed a recursively bipartite highly recursive graph that satisfies Hall’s condition for a bipartite graph to have a matching, but has no recursive matching.
openaire   +2 more sources

The Influence of Field‐Assisted Sintering Technology (FAST) Temperature and Cooling Rate on the Microstructural Evolution in Gamma‐Titanium Aluminide Alloy GE4822

Advanced Engineering Materials, EarlyView.
Controlling the Field Assisted Sintering Technology (FAST) parameters, dwell temperature and cooling rate, significantly influences the microstructural evolution in titanium aluminide GE4822. Significant γ‐lamellar colonies develop only upon cooling through the α‐transus.
Jack Krohn, James Pepper, Martin Jackson
wiley   +1 more source

Study on the Influence of Hall Effect on the Performance of Disk Generation Channel

Magnetochemistry
Compared to the Faraday-type power generation channel structure, the disk-type power generation channel offers several advantages, including a simpler structure, higher enthalpy extraction efficiency, and greater power density. These features effectively
Linyong Li, Guang Wang, Yingke Liao, Qing Wu, Peijie Ning   +4 more
doaj   +1 more source

Microstructure Modification of Additively Manufactured Mo–9Si–8B by Annealing and Its Effects on High‐Temperature Mechanical Properties

Advanced Engineering Materials, EarlyView.
Postbuild annealing systematically modifies the phase fractions and morphology of EB‐PBF processed Mo–9Si–8B. Quantitative microstructure–property correlations reveal how controlled phase evolution enhances high‐temperature compressive strength and creep resistance.
Christopher Schmidt, Yong Chen, Georg Hasemann, Benjamin Wahlmann, Carolin Körner, Manja Krüger   +5 more
wiley   +1 more source

Zn₂SnO₄ Thin Films for Photovoltaics: Structural Optimization and Charge Transport Analysis

East European Journal of Physics
In this study, (Zn,Sn)O thin films were synthesized and characterized for potential application as buffer layers in photovoltaic devices. The films were deposited using thermal evaporation in a high-vacuum chamber, followed by a controlled oxidation ...
Fakhriddin T. Yusupov, Tokhirbek I. Rakhmonov, Dadakhon Sh. Khidirov, Shakhnoza Sh. Akhmadjanova, Javokhirbek A. Akhmadaliyev   +4 more
doaj   +1 more source

THE QUANTUM HALL EFFECT IN GRAPHENE [PDF]

Modern Physics Letters B, 2012
We investigate the quantum Hall effect in graphene. We argue that in graphene in presence of an external magnetic field there is dynamical generation of mass by a rearrangement of the Dirac sea. We show that the mechanism breaks the lattice valley degeneracy only for the n = 0 Landau levels and leads to the new observed ν = ±1 quantum Hall plateaus ...
openaire   +3 more sources

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Effect of Nickel Oxide on Morphological and Electrical Properties of Manganese Oxide Nanostructured Thin Films

Proceedings of the International Conference on Applied Innovations in IT
In this study, thin films of manganese oxide (Mn₃O₄) doped with nickel oxide (NiO) at different doping ratios (0, 1, 3, 5, and 7%) were prepared and deposited on glass slides at a temperature of 350°C using the chemical spray pyrolysis technique ...
Ali Younis Ibrahim, Faisal Ghazi Hammoodi   +1 more
doaj   +1 more source

Spin Injection Of Exciton–Polaritons With Halide Perovskites At Room Temperature

Advanced Functional Materials, EarlyView.
A monolithic Tamm‐plasmon microcavity embedding a two‐dimensional halide perovskite enables room‐temperature spin injection of exciton‐polaritons under quasi‐resonant optical excitation. Polarization‐resolved spectroscopy reveals partial preservation of the injected spin in the lower polariton branch, while bare excitons remain fully depolarized.
Elena Sendarrubias Arias‐Camisón, Maksim Lednev, Jorge Cuadra, Raúl Gago, Luis Viña, Francisco José García Vidal, Johannes Feist, Ferry Prins, Carlos Antón Solanas   +8 more
wiley   +1 more source