Results 161 to 170 of about 276,626 (313)

Porous Bi2S3 Bulk With Excellent Thermoelectric Performance by Solid States Replacement and Low Melting‐Point Metal Volatilization

open access: yesAdvanced Materials, EarlyView.
By introducing FeCoNi medium‐entropy alloy, the bismuth sulfide (Bi2S3) material achieves a record‐high ZT of 1.1 at 773 K, owing to the solid‐states replacement reaction and the volatilization of low melting‐point metal. This strategy is also applicable to other sulfur‐based thermoelectric materials.
Zi‐Yuan Wang   +9 more
wiley   +1 more source

Room temperature observation of the anomalous in-plane Hall effect in a Weyl ferromagnet. [PDF]

open access: yesNat Commun
Sankar S   +9 more
europepmc   +1 more source

On‐Surface Synthesis of Bismuth Monolayers through Ice‐Confined Redox Reactions

open access: yesAdvanced Materials, EarlyView.
We report an ice‐confined growth strategy for the synthesis of atomically thin 2D bismuth and related 2D metals. This approach involves rapid freezing of a BiCl3 aqueous solution on an aluminum foil using liquid nitrogen, which triggers interfacial redox reactions between the ice and the aluminum surface.
Zexiang He   +8 more
wiley   +1 more source

Spatiotemporally Resolved Orbital Hall Effect in a Topological Semimetal. [PDF]

open access: yesAdv Mater
Park BC   +8 more
europepmc   +1 more source

Atomically Resolved Acoustic Dynamics Coupled with Magnetic Order in a Van der Waals Antiferromagnet

open access: yesAdvanced Materials, EarlyView.
Magnetically coupled acoustic phonon modes (f1, f2, f3) are captured by ultrafast X‐ray diffraction in a prototypical van der Waals antiferromagnet FePS3, including their atomic displacement vectors (u) and the acoustic propagation wave vectors (k). Notably, the atomic displacement vector and amplitude of these modes, represented by the direction and ...
Faran Zhou   +24 more
wiley   +1 more source

Observation of anomalous thermal Hall effect in a Kagome superconductor. [PDF]

open access: yesSci Adv
Yoshida H   +10 more
europepmc   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

open access: yesAdvanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid   +6 more
wiley   +1 more source

Optical trapping with optical magnetic field and photonic Hall effect forces. [PDF]

open access: yesNat Commun
Li Y   +8 more
europepmc   +1 more source

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