Results 201 to 210 of about 2,893,264 (286)
Boosting the Transparency of Metallic SrNbO3 Through Ti Doping
Transparent conductors are optoelectronic devices of high demand. The present study presents a path on how to boost the figure of merit of the recently proposed perovskite oxides: Ti doping reduces electronic correlations and thus the absorption above the plasma frequency, while keeping the plasma frequency below the visible range.
Shammi Kumar +5 more
wiley +1 more source
Quantum Valley Hall Effect-Based Coupler with Continuously Tunable Transmission for Topological Information Communication. [PDF]
Funayama K +3 more
europepmc +1 more source
This study demonstrates how implantation‐induced defects in CrN thin films enable controlled tuning of electrical transport from metallic to semiconductor‐like behavior while preserving thermal conductivity. Through cumulative argon implantation, defect landscapes are engineered to manipulate carrier mobility and conduction mechanisms, revealing key ...
Hugo Bouteiller +8 more
wiley +1 more source
Quantum Hall effect in a CVD-grown oxide. [PDF]
Zheliuk O +12 more
europepmc +2 more sources
Exciton-Polariton Valley Hall Effect in Monolayer Semiconductors on Plasmonic Metasurface. [PDF]
Lee CJ +7 more
europepmc +1 more source
Energy spectrum and the quantum Hall effect on the square lattice with next-nearest-neighbor hopping [PDF]
Yasuhiro Hatsugai, Mahito Kohmoto
openalex +1 more source
Refined Epitaxial Growth of YbRh2Si2 Thin Films
Epitaxial thin films of the heavy fermion compound YbRh2Si2 have opened new possibilities for investigating the strange metal state. This study enhances the crystallinity and surface smoothness of YbRh2Si2 thin films grown by molecular beam epitaxy.
Stefania Isceri +20 more
wiley +1 more source
A Comparative Performance Analysis of Load Cell and Hall-Effect Brake Sensors in Sim Racing. [PDF]
Joyce JM, Toth AJ, Campbell MJ.
europepmc +1 more source
Halide perovskite quantum dots, with their flexible ABX3 lattice enabling collaborative electronic and ionic transport, offer scalable, low‐cost routes to resistive memories, opto‐electronic control, neuromorphic devices, and field‐effect transistors.
Hyojung Kim
wiley +1 more source
A Hall Effect-Based Force Sensing Mechanism for Force Sensing Inside Magnetic Resonance Imaging Scanner. [PDF]
Chen YC +4 more
europepmc +1 more source

