Results 151 to 160 of about 37,717 (312)

Monolayer BX (X = P, As, Sb): Emerging High‐Performance Channel Materials for Advanced Transistors

Advanced Electronic Materials, EarlyView.
Using a first‐principles quantum transport approach, the intrinsic transport properties of 2D BX (X = P, As, Sb) materials are investigated. These materials exhibit high on‐currents and excellent ambipolar symmetry in MOSFET configurations, and break the Boltzmann limit of subthreshold swing in TFETs while maintaining high and symmetric bipolar ...
Shuai Lang, Shaoqiang Guo, Haishan Zhang, Juan Lyu, Jian Gong   +4 more
wiley   +1 more source

Sign Competing Sources of Berry Curvature and Anomalous Hall Conductance Humps in Topological Ferromagnets

Advanced Electronic Materials, EarlyView.
Mechanism proposed for the humps in topological ferromagnet. a) Hysteresis loops of σxy in external uniaxial magnetic field Hz and b) Anomalous Hall conductivity σxy as a function of polar angle θ. Data for |h⃗|$|\vec{h}|$ = 3t and λR/t = 0.08. A, B, and C are the states of the 2D topological ferromagnets.
Wojciech Brzezicki, Carmine Autieri, Mario Cuoco   +2 more
wiley   +1 more source

Data-driven approach to the deep learning of the dynamics of a non-integrable Hamiltonian system. [PDF]

Sci Rep
Doria Rosales E, Carbone V, Lepreti F.
europepmc   +1 more source

The second Birkhoff theorem for optical Hamiltonian systems [PDF]

, 1991
Leonid Polterovich
openalex   +1 more source

Multiferroicity in Calcium Manganate via Strain Engineering

Advanced Electronic Materials, EarlyView.
Multiferroicity is achieved in the non‐ferroelectric magnet calcium manganate through tensile‐strain engineering. The ferroelectricity below 45 K is evidenced by the polarization‐electric field hysteresis loops, and the magnetization below 125 K is confirmed by the magnetization measurements.
Ye Yuan, Zhen Yang, Cheng Ma, Kui‐juan Jin, Shuai Xu, Er‐jia Guo, Chen Ge, Can Wang, Xiulai Xu, Meng He, Guozhen Yang   +10 more
wiley   +1 more source

Ising critical behavior of a non-Hamiltonian lattice system [PDF]

, 1994
Joaquín Marro, Julio F. Fernández, J. M. González-Miranda, M. Puma   +3 more
openalex   +1 more source

Intrinsic Strain‐Driven Topological Evolution in SrRuO3 via Flexural Strain Engineering

Advanced Electronic Materials, EarlyView.
A flexural strain platform is developed to isolate intrinsic strain effects on the topological electronic structure in SrRuO3, and demonstrates that the topological properties and associated anomalous Hall effect can be effectively modulated via strain engineering without introducing phase transitions or crystal defects, offering a new approach for ...
Liguang Gong, Hongping Jiang, Bin Lao, Xuan Zheng, Xuejiao Chen, Zhicheng Zhong, Yan Sun, Xianfeng Hao, Milan Radovic, Run‐Wei Li, Zhiming Wang   +10 more
wiley   +1 more source

Homological (ghost) approach to constrained Hamiltonian systems [PDF]

, 1992
Jim Stasheff
openalex   +1 more source

Atomistic Modeling of Valence Change Memory Devices: What Can We Learn from Simulations?

Advanced Electronic Materials, EarlyView.
Simulation of resistive switching in valence change memory cells tusing density functional theory (DFT), molecular dynamics (MD), nudged elastic band (NEB), kinetic Monte Carlo (KMC), and quantum transport (QT) methods. Abstract Resistive switching devices based on the valence change effect have shown promise for applications in emerging in‐memory and ...
Marko Mladenović, Mathieu Luisier
wiley   +1 more source

Ductile Inorganic Thermoelectrics: Advances, Challenges, and Perspectives

Advanced Energy Materials, EarlyView.
Thermoelectric technology facilitates efficient energy harvesting from natural sources, especially body heat. Plastic bulk inorganic thermoelectric materials offer high plasticity, ease of fabrication, and competitive thermoelectric performance. This review comprehensively outlines recent advances in plastic bulk inorganic thermoelectrics, focusing on ...
Cheng‐Jiong He, Xiao‐Lei Shi, Nan‐Hai Li, Meng Li, Jun Pei, Zhi‐Gang Chen   +5 more
wiley   +1 more source