Results 241 to 250 of about 1,038,620 (334)
Research on the Evolution of Defects Initiation and the Diffusion of Dopant on the Si/SiO2 Interface
This review mainly introduces the recent investigations on the mechanisms of interface defect initiation and dopant diffusion, and the comparisons and discussions of the initial mechanism of defects, structures of defects to provide valuable guidance for improving the performance and extending the lifespan of Si/SiO2 interfaces.
Yunqi Yang+7 more
wiley +1 more source
Exploration the effect of nonstationary signals on the tidal phenomenon using F_TIDE part I. [PDF]
Zhang Y, Jiao S, Zhou W, Wang Y, Lv X.
europepmc +1 more source
Twisted GeS Nanowire with Engineered Stacking Order and Tunable Composition
1D twisted GeS nanowires with engineered stacking orders and tunable bandgaps are synthesized using an axial screw dislocation mechanism. These nanowires exhibit enhanced photoelectronic properties and strong second harmonic generation (SHG), presenting new opportunities for future electronic and optoelectronic applications.
Qi Wu+9 more
wiley +1 more source
Robust power management capabilities of integrated energy systems in the smart distribution network including linear and non-linear loads. [PDF]
Jin K+6 more
europepmc +1 more source
Using QCM‐D for Real‐Time Analysis of Cell Adhesion Dynamics at Biointerfaces
This study explores adhesion of human fibroblasts to functionalized biomaterial surfaces. Quartz crystal microbalance with dissipation (QCM‐D) is used to measure cell responses in real time. The QCM‐D signalis correlated with changes in cell morphology and focal adhesion kinase (FAK) activation. This data shows a positive correlation between the energy
Agnes Rogala+2 more
wiley +1 more source
Novel technique for precise derating torque of induction motors using ANFIS. [PDF]
Shaier AA+4 more
europepmc +1 more source
The functionality of nuclear structural materials, sensors, and microelectronics in radiation environments relies on understanding defect generation and evolution processes in oxide layers. The initial radiation response of Fe3O4 epitaxial thin films is characterized by the formation of large vacancy clusters, but these defects do not lead to lattice ...
Tiffany C. Kaspar+11 more
wiley +1 more source