Results 111 to 120 of about 12,328 (233)
Exploring binding energy and separation energy dependences of HBT strength
Hanbury Brown–Twiss (HBT) results of the nucleon–nucleon correlation function have been presented for the nuclear reactions with neutron-rich projectiles (Be isotopes) using an event-generator, the Isospin-Dependent Quantum Molecular Dynamics model.
Ma, G.L. +8 more
core +1 more source
HBT sexualitet : -ur ett explorativt sociologiskt maktperspektiv
I denna uppsats har vi använt oss av ett sociologiskt maktperspektiv där vi explorativt har undersökt om HBT kan ses som ett fält där olika medlemmar/personer strider om makt, resurser och status inom fältet.
Lundberg, Oline, Brückner, Marika
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An analytical study to quantify the substrate parasitic effects on SiGe HBT amplifiers in both common-base and common-emitter configuration is presented.
Neti V L Narasimha Murty +1 more
doaj +1 more source
制作了基区Ge组分分别为0.20和0.23的多发射极指数双台面结构SiGe异质结双极型晶体管(HBT).实验结果表明,基区Ge组分的微小增加,引起了较大的基极复合电流,但减小了总的基极电流,提高了发射结的注入效率,电流增益成倍地提高.Ge组分从0.20增加到0.23,HBT的最大直流电流增益从60增加到158,提高了约2 ...
陈松岩 +6 more
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Application of polycrystalline SiGe for gain control in SiGe heterojunction bipolar transistors [PDF]
Anteney, I.M. +11 more
core +1 more source
Electrical Characterization of Ⅲ-ⅤCompound HBT device
無線通訊產品是目前很熱門的,在微波電路中,RF 功率放大器則佔有重要的角色。有鑑於 Ⅲ-Ⅴ 族材料系統極佳之高速表現及高電子移動率特性,使得磷化銦鎵/砷化鎵異質接面雙極性電晶體在無線通訊高頻積體電路應用上極具發展潛力,異質接面雙極性電晶體,由於具有高速操作及高電流驅動能力,近幾年來已被廣泛的應用在數位及微波積體電路上。本篇論文的主要目的即是在探討HBT 元件之直流與交流特性。其元件採用 穩懋 2μm 製程的 InGaP/GaAs HBT。一方面先量測分析實際HBT 元件的直流特性 ...
黃建傑, Huang, Chien-Chieh
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Pycnoporus cinnabarinus laccase and a chimeric laccase-CBM were applied in softwood kraft pulp biobleaching in the presence of 1-hydroxybenzotriazole (HBT).
Bertaud, Frédérique +21 more
core +1 more source
HBT + christian = love : A study of HBT people's experience of living in the Christian contex
Syftet med denna studie var att försöka få en inblick i hur det är att leva i den komplexa kontexten i att ha en hbt (homo-bi-trans) läggning och att vara kristen. Vi ville på individnivå försöka tolka och förstå genom ett queerteoretiskt perspektiv.
Persson, Rickard +2 more
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Documentation of the FBH HBT Model
ver 2.1.20050728 The GaAs-HBT technology nowadays is a standard technology, which is readily available to circuit designers. However, while at least three highly accurate models for Si-based HBTs are available, good models for the GaAs and InP world are ...
Matthias Rudolph
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Comparison of InP/InGaAs HBT and InAlAs/InGaAs HBT for ULP Applications [PDF]
The increased demand for portable electronics has lead to the need for higher performance and efficiency. Devices operating at less than 50 {micro}W of power are defined as ultra-low-power (ULP) devices.
Baca, A. G. +5 more
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