Results 131 to 140 of about 5,371 (186)

An HSPICE HBT model for InP-based single HBTs

IEEE Transactions on Electron Devices, 1996
An HBT model for InP-based single HBTs (SHBTs) was developed based on the conventional Gummel-Poon large-signal BJT model available in HSPICE. Several typical characteristics observed from InP-based SHBTs, such as soft breakdown and collector transit-time delay effects, were modeled through a macro modeling approach.
Yang, K Yang, Kyounghoon, GutierrezAitken, AL, Zhang, X, Batthacharya, P, Haddad, GI   +4 more
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Reliability investigation in SiGe HBT's

2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496), 2002
This paper addresses some reliability properties of SiGe HBTs. We first verified that no major problems were related to the SiGe layer through DC life tests. In the second step, we investigated the hot carrier influence on the DC, noise and microwave properties of these devices.
J. Kuchenbecker, BORGARINO, Mattia, L. Bary, G. Cibiel, O. Llopis, J. G. Tartarin, J. Graffeuil, S. Kovacic, J. L. Roux, R. Plana   +9 more
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GaAs HBT's for analog circuits

Proceedings of the IEEE, 1993
Silicon bipolar integrated circuit (IC) technology has dominated the analog IC world for over two decades. As the push for wider bandwidths with higher precision continues, the emergence of GaAs HBT technology is destined to challenge silicon bipolar's domination at the high end of the analog market.
Bert K. Oyama, Brian P. Wong
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Calculation of the power capabilities of HBT amplifiers based on a new physical HBT model

International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering, 1996
A novel model for the simulation of the microwave power capabilities of HBTs is presented. The model is based on physical analytical formulation of the terminal currents as functions of the base-emitter and base-collector voltages. It takes into account the unequal thermal distribution of temperature for multifinger HBT devices, the impact ionization ...
V. Krozer, M. Ruppert, M. Schussler, K. Fricke, W.Y. Lee, H.L. Hartnagel   +5 more
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Agilent HBT model extraction and circuit verification for InGaP/GaAs HBT

2008 11th IEEE International Conference on Communication Technology, 2008
Agilent HBT model parameters are extracted from the multi-finger InGaP/ GaAs HBT fabricated in 2 um process. Comparison has been made between measured and simulated data for verification purpose. With frequency range from DC to 20.05 GHz, this model is suitable for simulating InGaP/ GaAs HBT AC small -signal characterization. Using this model to verify
null Jian Han, null Ling-ling Sun, null Jun Liu, null Jin-cai Wen   +3 more
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HBTs in telecommunications

Solid-State Electronics, 1997
Abstract This article discusses the use of heterostructure bipolar transistor (HBT) ICs in telecommunication system products. Of particular interest is the fit between HBT ICs and telecommunication system needs, in terms of commercial criteria as well as performance.
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GaAs HBT Reliability

2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008
We discuss the many factors affecting the reliability of GaAs HBTs that we have encountered starting from the early days of AlGaAs-emitter HBTs through the present day use of InGaP-emitter HBTs. We discuss both wearout and infancy failure modes and try to distinguish fundamental (i.e., unavoidable) from nonfundamental failure modes.
B. Yeats, T. S. Low, K. Alt, M. E. Adamski, M. Bonse, D. C. D'Avanzo, M. Dvorak, C. P. Hutchinson, M. Iwamoto, F. G. Kellert, D. K. Kuhn, R. L. Shimon, T. E. Shirley   +12 more
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Modeling and characterization of HBT limits

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2020
In this paper, we present an overview of electrothermal runaway and mixed-mode degradation in HBTs. Both these effects limit the bias up to which an HBT can be used in circuit design. For electrothermal runaway, we discuss the DC case, with and without externally applied base resistance, and also the “pulsed SOA” case, which is most relevant to RF ...
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A multifunctional HBT technology

12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC), 2002
A self-aligned AlGaAs/GaAs HBT technology has been developed for the fabrication of both high-performance microwave circuits and high-performance digital circuits. The technology provides transistors with high f/sub max/ (up to 218 GHz), high f/sub t/ (up to 98 GHz), and high efficiency (power added efficiency higher than 67.8% at 10 GHz) microwave ...
W.J. Ho, M.F. Chang, N.H. Sheng, N.L. Wang, P.M. Asbeck, K.C. Wang, R.B. Nubling, G.J. Sullivan, J.A. Higgins   +8 more
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Applications of HBTs

Solid-State Electronics, 1995
Abstract Recent advances in heterojunction bipolar transistor (HBT) technology enable trial uses in some systems utilizing advantages of HBTs such as high power handling capability, high current drive capability, low 1 f noise characteristics, with high frequency and high speed performance.
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