Results 171 to 180 of about 117,355 (215)

A Dual‐Programmable 2M NOR Flash Architecture for Energy‐Efficient In‐Memory Computing

Advanced Science, EarlyView.
In conventional NOR Flash, the access transistor occupies area but stores no information. Here, it is repurposed as a programmable second memory device that plays two functional roles: an analog memory element that lowers the minimum read current from 72.7 nA to 4.22 pA, and a current‐path gating element enabling true‐off pruning and current‐range ...
Suhan Kim, Donghyun Ryu, Hyoseob Kim, Sangwoo Jung, Min‐Hwi Kim   +4 more
wiley   +1 more source

Private detection of relatives in forensic genomics using homomorphic encryption. [PDF]

BMC Med Genomics
de Souza FDM, de Lassus H, Cammarota R.
europepmc   +1 more source

Shear‐Mode Direct Piezoelectric Response of Ferroelectric Nematic Liquid Crystals

Advanced Science, EarlyView.
Periodic shear‐induced electric current measurements are reported on two archetypic ferroelectric nematic liquid crystal compounds. From the temperature, frequency and shear angle dependent results of the first and second harmonic current signals together with temperature and oscillatory rheology measurements, the effective piezoelectric coupling ...
Péter Salamon, Marcell Tibor Máthé, Hiroya Nishikawa, Fumito Araoka, Antal Jákli   +4 more
wiley   +1 more source

Opposite Trap‐State Evolution Pathways Govern Endurance and Retention Failure in Amorphous Chalcogenide Memory

Advanced Science, EarlyView.
GeSbSe selector‐only memory devices are investigated through physical and electrical analyses to reveal opposite trap‐state evolution pathways governing reliability degradation. Endurance cycling drives Se migration, transitioning traps from deep to shallow states.
Byung Jun Lee, Won Hee Jeong, Min Kyu Yang, Gun Hwan Kim   +3 more
wiley   +1 more source

Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors

Advanced Electronic Materials, EarlyView.
Joule losses are a serious concern in modern integrated circuit design. In this regard, minimizing the energy necessary for programming memristors should be handled with care. This manuscript presents an optimal control framework, allowing to derive energy‐efficient programming voltage protocols for resistance switching devices. Following this approach,
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto, Yuriy V. Pershin   +3 more
wiley   +1 more source

Model‐Based Time‐Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

Advanced Electronic Materials, EarlyView.
A novel model‐based time‐modulated write algorithm efficiently programs analog 1R memristive crossbar arrays by varying pulse duration at a fixed voltage. By leveraging a physics‐based compact model and a dynamic gain mechanism, this approach overcomes device nonlinearities and parasitic effects.
Richard Schroedter, Ahmet Samil Demirkol, Ioannis Messaris, Christian Bruchatz, Eter Mgeladze, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff   +7 more
wiley   +1 more source

Enhanced High Dimensionality and the Information Processing Capacity in Interfered Spin Wave‐Based Reservoir Computing, Achieved With Eight Detectors

Advanced Electronic Materials, EarlyView.
Physical reservoir computing (PRC) based on spin wave interference has demonstrated high computational performance, yet room for improvement remains. In this study, we fabricated this concept PRC with eight detectors and evaluated the impact of the number of detectors using a chaotic time series prediction task.
Sota Hikasa, Wataru Namiki, Daiki Nishioka, Maki Nishimura, Ryo Iguchi, Kazuya Terabe, Takashi Tsuchiya   +6 more
wiley   +1 more source

Synchronization of Analog Neuron Circuits With Digital Memristive Synapses: An Hybrid Approach

Advanced Electronic Materials, EarlyView.
An hybrid circuit mimicking neural units coupled using memristive synapses is introduced. The analog neurons provide flexibility and robustness, and the digital memristive coupling guarantees the full reconfigurability of the interconnection. The onset of a synchronized spiking behavior in two circuits mimicking the Izhikevich neuron is discussed from ...
Lamberto Carnazza, Francesco Maria Esposito, Carlo Famoso, Arturo Buscarino   +3 more
wiley   +1 more source

Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures

Advanced Electronic Materials, EarlyView.
Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak, Marcus A. Wohlgemuth, Anton Kaus, Lisa Heymann, Alexandros Sarantopoulos, Lee‐Kang Huang, Christoph Baeumer, Regina Dittmann, Felix Gunkel   +8 more
wiley   +1 more source