Results 11 to 20 of about 4,411 (199)
Graphene nanoribbon heterojunctions [PDF]
Nature Nanotechnology, 2014 Despite graphene's remarkable electronic properties, the lack of an electronic bandgap severely limits its potential for applications in digital electronics. In contrast to extended films, narrow strips of graphene (called graphene nanoribbons) are semiconductors through quantum confinement, with a bandgap that can be tuned as a function of the ...
Jinming Cai +11 more
openaire +4 more sources
Journal of Advanced Ceramics, 2022 Semiconductor heterojunction plays a pivotal role in photocatalysis. However, the construction of a heterojunction with a fine microstructure usually requires complex synthetic procedures.
Yan Xing +8 more
doaj +1 more source
Nanotubular boron-carbon heterojunctions [PDF]
The Journal of Chemical Physics, 2004 Linear nanotubular boron-carbon heterojunctions are systematically constructed and studied with the help of ab initio total energy calculations. The structural compatibility of the two classes of materials is shown, and a simple recipe that determines all types of stable linear junctions is illustrated in some detail.
Kunstmann, Jens, Quandt, Alexander
openaire +3 more sources
Materials Research Express, 2020 We studied an enhanced photoluminescence (PL) effect of CsPbBr _3 /Al _2 O _3 heterojunction by using gold nanoparticls (NPs). The CsPbBr _3 /Al _2 O _3 heterojunction and CsPbBr _3 /Au/Al _2 O _3 heterojunction were respectively prepared on porous Al _2
Zhongchen Bai +3 more
doaj +1 more source
Tunable electronic structure in twisted WTe2/WSe2 heterojunction bilayer
AIP Advances, 2022 Electronic structures of non-twisted and twisted WTe2/WSe2 heterojunction bilayers were investigated using first-principles calculations. Our results show that, for the twisted WTe2/WSe2 heterojunction bilayer, the bandgaps are all direct bandgaps, and ...
Zi-Si Chen +5 more
doaj +1 more source
Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties
Scientific Reports, 2018 Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride (GaN) and its photodetection properties have been reported in the present work.
Monika Moun +4 more
doaj +1 more source
Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS
Micromachines, 2023 SiC/Si and GaN/Si heterojunction technology has been widely used in power semiconductor devices, and SiC/Si VDMOS and GaN/Si VDMOS were proposed in our previous paper.
Xin Yang, Baoxing Duan, Yintang Yang
doaj +1 more source
Materials Science for Energy Technologies, 2018 Pairing tungsten oxide (WO3) and bismuth vanadate (BiVO4) to form heterojunction photoanode is a very promising strategy to attain the enhanced photoelectrochemical (PEC) water splitting efficiency. In fact, the PEC efficiency of WO3/BiVO4 heterojunction
Basanth S. Kalanoor +2 more
doaj +1 more source
Advanced Materials Interfaces, 2023 Fabricating a heterojunction photodetector is efficient to take advantage of the built‐in electric field formed by heterojunction and thus improve the performance of photodetector.
Zunxian Lv +7 more
doaj +1 more source
C-axis oriented growth of ZnO nanorods over Mg:GaN for improved heterojunction device performance
AIP Advances, 2019 Heterojunction device performance has strong dependence on its junction interface. ZnO deposition over GaN to achieve a heterojunction is challenging as it usually requires high temperature and vacuum processing.
Lawrence Sylaja Vikas +1 more
doaj +1 more source