Results 11 to 20 of about 158,162 (328)

Graphene nanoribbon heterojunctions [PDF]

open access: yesNature Nanotechnology, 2014
Despite graphene's remarkable electronic properties, the lack of an electronic bandgap severely limits its potential for applications in digital electronics. In contrast to extended films, narrow strips of graphene (called graphene nanoribbons) are semiconductors through quantum confinement, with a bandgap that can be tuned as a function of the ...
Jinming Cai   +11 more
openaire   +4 more sources

Self-assembled Ag4V2O7/Ag3VO4 Z-scheme heterojunction by pH adjustment with efficient photocatalytic performance

open access: yesJournal of Advanced Ceramics, 2022
Semiconductor heterojunction plays a pivotal role in photocatalysis. However, the construction of a heterojunction with a fine microstructure usually requires complex synthetic procedures.
Yan Xing   +8 more
doaj   +1 more source

Nanotubular boron-carbon heterojunctions [PDF]

open access: yesThe Journal of Chemical Physics, 2004
Linear nanotubular boron-carbon heterojunctions are systematically constructed and studied with the help of ab initio total energy calculations. The structural compatibility of the two classes of materials is shown, and a simple recipe that determines all types of stable linear junctions is illustrated in some detail.
Kunstmann, Jens, Quandt, Alexander
openaire   +3 more sources

Enhanced photoluminescence of a CsPbBr3/Al2O3 film heterojunction enabled by coupling of gold nanoparticles

open access: yesMaterials Research Express, 2020
We studied an enhanced photoluminescence (PL) effect of CsPbBr _3 /Al _2 O _3 heterojunction by using gold nanoparticls (NPs). The CsPbBr _3 /Al _2 O _3 heterojunction and CsPbBr _3 /Au/Al _2 O _3 heterojunction were respectively prepared on porous Al _2
Zhongchen Bai   +3 more
doaj   +1 more source

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact. [PDF]

open access: yes, 2014
We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact.
Battaglia, Corsin   +8 more
core   +2 more sources

Screen printed Pb₃O₄ films and their application to photoresponsive and photoelectrochemical devices [PDF]

open access: yes, 2018
A new and simple procedure for the deposition of lead (II, IV) oxide films by screen printing was developed. In contrast to conventional electrochemical methods, films can be also deposited on non-conductive substrates without any specific dimensional ...
Latini, Alessandro   +2 more
core   +1 more source

Tunable electronic structure in twisted WTe2/WSe2 heterojunction bilayer

open access: yesAIP Advances, 2022
Electronic structures of non-twisted and twisted WTe2/WSe2 heterojunction bilayers were investigated using first-principles calculations. Our results show that, for the twisted WTe2/WSe2 heterojunction bilayer, the bandgaps are all direct bandgaps, and ...
Zi-Si Chen   +5 more
doaj   +1 more source

Theoretical investigation of direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and quantum well interband tunnel junctions for multi-junction solar cells [PDF]

open access: yes, 2012
Direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and double quantum well interband tunnel heterojunctions are simulated rigorously using the non-equilibrium Green's function formalism for coherent and dissipative quantum transport in
Aeberhard, Urs
core   +2 more sources

Understanding of MoS2/GaN Heterojunction Diode and its Photodetection Properties

open access: yesScientific Reports, 2018
Fabrication of heterojunction between 2D molybdenum disulfide (MoS2) and gallium nitride (GaN) and its photodetection properties have been reported in the present work.
Monika Moun   +4 more
doaj   +1 more source

Analysis of SiC/Si Heterojunction Band Energy and Interface State Characteristics for SiC/Si VDMOS

open access: yesMicromachines, 2023
SiC/Si and GaN/Si heterojunction technology has been widely used in power semiconductor devices, and SiC/Si VDMOS and GaN/Si VDMOS were proposed in our previous paper.
Xin Yang, Baoxing Duan, Yintang Yang
doaj   +1 more source

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