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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1983
HgCdTe heterojunctions consisting of a wide band gap n-type Hg1−xCdxTe layer grown epitaxially on a narrow band gap p-type Hg1−yCdyTe substrate (x>y) were studied. The heterojunction transition region between x and y materials was found to be graded over distances of about 0.4 to 0.8 μm. The position of the p–n junction depletion layer within
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HgCdTe heterojunctions consisting of a wide band gap n-type Hg1−xCdxTe layer grown epitaxially on a narrow band gap p-type Hg1−yCdyTe substrate (x>y) were studied. The heterojunction transition region between x and y materials was found to be graded over distances of about 0.4 to 0.8 μm. The position of the p–n junction depletion layer within
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pSi-nCdS Heterojunction Photodetectors
Physica Status Solidi (a), 1978Heterojunctions of the type pSinCdS are fabricated by depositing epitaxial films on single crystal silicon substrates using the technique of electron beam evaporation of CdS powder under UHV conditions. The basic junction properties such as photo-conduction, I–U and C–U characteristics are investigated.
F. M. Livingstone +2 more
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Assembled Monolayer Nanorod Heterojunctions
ACS Nano, 2011Compositional and interfacial control in heterojunction thin films is critical to the performance of complex devices that separate or combine charges. For high performance, these applications require epitaxially matched interfaces, which are difficult to produce.
Jessy B, Rivest +4 more
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Buried Heterojunction Electroabsorption Modulator
Integrated and Guided Wave Optics, 1978We report the successful operation of a semiconductor buried heterojunction electroabsorption modulator. These modulators are good candidates for integration with other devices because: (1) they do not require additional optical elements (e.g.
J. C. Campbell +3 more
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Shallow impurities in heterojunctions
Journal of Physics and Chemistry of Solids, 1992Abstract The shallow impurity states in Si/SiO 2 and GaAs/Ga 1− x Al x As heterojunctions are studied variationally using an improved Fang-Howard trial wave function originally proposed for the Si/SiO 2 system.
ELKAWNI, MI, Tomak, Mehmet
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Theory of Semiconductor Heterojunctions
MRS Proceedings, 1982A short review of characteristic electronic properties of heterojunction interfaces is given. Band edge discontinuities and interface band structures for lattice-matched junctions are discussed in detail. The examples presented include non-polar and polar junctions as well as overlayer systems.
J. Pollmann, A. Mazur
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1996
The three topics presented in this thesis all concern silicon heterojunction growth and device applications. We developed growth techniques for two relatively immature material systems, silicon/calciumfluoride (Si/CaF2) and silicon/silicon-carbon (Si/Si1-yCy), and fabricated devices which take the mature silicon/silicon dioxides (Si/SiO2) material ...
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The three topics presented in this thesis all concern silicon heterojunction growth and device applications. We developed growth techniques for two relatively immature material systems, silicon/calciumfluoride (Si/CaF2) and silicon/silicon-carbon (Si/Si1-yCy), and fabricated devices which take the mature silicon/silicon dioxides (Si/SiO2) material ...
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Heterojunctions in Composite Photocatalysts
2015Combining different light-absorbing materials for the formation of semiconductor heterojunctions is a very effective strategy for preparing highly active photocatalyst and photoelectrochemical systems. Moreover, the combination of solid state semiconductors with polymers or molecular absorbers expands the possible combinations of materials to alter ...
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