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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1983
HgCdTe heterojunctions consisting of a wide band gap n-type Hg1−xCdxTe layer grown epitaxially on a narrow band gap p-type Hg1−yCdyTe substrate (x>y) were studied. The heterojunction transition region between x and y materials was found to be graded over distances of about 0.4 to 0.8 μm. The position of the p–n junction depletion layer within
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HgCdTe heterojunctions consisting of a wide band gap n-type Hg1−xCdxTe layer grown epitaxially on a narrow band gap p-type Hg1−yCdyTe substrate (x>y) were studied. The heterojunction transition region between x and y materials was found to be graded over distances of about 0.4 to 0.8 μm. The position of the p–n junction depletion layer within
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Design principle of S-scheme heterojunction photocatalyst
Journal of Materials Science and Technology, 2022Quanlong Xu +2 more
exaly
Optical Properties of Heterojunctions and Heterojunction Lasers
1972A.G. Milnes, D.L. Feucht
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Recent advances in g-C3N4-based heterojunction photocatalysts
Journal of Materials Science and Technology, 2020Yunfeng Li, Bei Cheng, Yan Shao
exaly