Results 261 to 270 of about 55,287 (317)
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Shallow impurities in heterojunctions
Journal of Physics and Chemistry of Solids, 1992Abstract The shallow impurity states in Si/SiO 2 and GaAs/Ga 1− x Al x As heterojunctions are studied variationally using an improved Fang-Howard trial wave function originally proposed for the Si/SiO 2 system.
ELKAWNI, MI, Tomak, Mehmet
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Defective heterojunction models
Surface Science, 1986Fermi-level pinning behavior has been observed at the free surface, oxide interface, metal interface, MBE grown surface, stop-regrown homojunction, and misfit-dislocation pinned heterojunction of GaAs. Theories of such behavior are numerous and disparate.
J.L. Freeouf, J.M. Woodall
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Band offset in semiconductor heterojunctions
Journal of Physics: Condensed Matter, 2021Abstract Semiconductor heterojunctions are widely applied in solid-state device applications, including semiconductor lasers, solar cells, and transistors. In photocatalysis they are of interest due to their capability to hinder charge carriers’ recombination.
Di Liberto G., Pacchioni G.
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Novel heterojunction varactors
Proceedings of the IEEE, 1992Several varactor structures that have been proposed for millimeter- and submillimeter-wave receiver systems are described, and their performance in a harmonic multiplier is compared. The performance is calculated using a nonlinear large-signal analysis program. >
Margaret A. Frerking, Jack R. East
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Solid-State Electronics, 1965
Abstract Work is described which shows that layers of GaSbxAs1-x, GaxIn1-xAs and Mn2As of device quality can be produced on GaAs using a simple alloying technique. The use of these layers in making heterojunctions with GaAs for opto-electronic devices is suggested and some of their optical and electrical properties are discussed.
J.R. Dale, M.J. Josh
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Abstract Work is described which shows that layers of GaSbxAs1-x, GaxIn1-xAs and Mn2As of device quality can be produced on GaAs using a simple alloying technique. The use of these layers in making heterojunctions with GaAs for opto-electronic devices is suggested and some of their optical and electrical properties are discussed.
J.R. Dale, M.J. Josh
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Variational method in a heterojunction
Physical Review B, 1991Determination des expressions analytiques de l'energie de l'etat fondamental et de la 1ere sous-bande d'une heterojonction en fonction de la temperature et de la concentration en electrons. La difference d'energie E 10 entre la premiere sous-bande et l'etat fondamental est en accord raisonnable avec les donnees obtenues dans une heterojonction GaAs-Ga
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Experiments on Ge-GaAs Heterojunctions
IRE Transactions on Electron Devices, 1962Abstract The electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described. I–V and electro-optical characteristics are consistent with a model in which the conduction- and valence-band edges at the interface are discontinuous.
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Heterojunctions in Composite Photocatalysts
2015Combining different light-absorbing materials for the formation of semiconductor heterojunctions is a very effective strategy for preparing highly active photocatalyst and photoelectrochemical systems. Moreover, the combination of solid state semiconductors with polymers or molecular absorbers expands the possible combinations of materials to alter ...
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1996
The three topics presented in this thesis all concern silicon heterojunction growth and device applications. We developed growth techniques for two relatively immature material systems, silicon/calciumfluoride (Si/CaF2) and silicon/silicon-carbon (Si/Si1-yCy), and fabricated devices which take the mature silicon/silicon dioxides (Si/SiO2) material ...
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The three topics presented in this thesis all concern silicon heterojunction growth and device applications. We developed growth techniques for two relatively immature material systems, silicon/calciumfluoride (Si/CaF2) and silicon/silicon-carbon (Si/Si1-yCy), and fabricated devices which take the mature silicon/silicon dioxides (Si/SiO2) material ...
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1986
Properties of electrons — and, in a few cases, of holes — in heterojunctions are described, with emphasis on simple treatments of energy levels and low-temperature transport properties in A1xGa1-xAs/GaAs heterojunctions. A few related aspects of electrons in quantum wells are also described.
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Properties of electrons — and, in a few cases, of holes — in heterojunctions are described, with emphasis on simple treatments of energy levels and low-temperature transport properties in A1xGa1-xAs/GaAs heterojunctions. A few related aspects of electrons in quantum wells are also described.
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