Results 41 to 50 of about 4,411 (199)
In this work, the high temperature and trap sates characteristics have been investigated for Al0.35Ga0.65N/GaN/Al0.25Ga0.75N double heterojunction. By using high-Al AlGaN barrier and back barrier layers, the maximum current at 200 ℃ is reduced by 35 ...
Shenglei Zhao +7 more
doaj +1 more source
Photonic Engineering Enables All‐Passive Upconversion Imaging with Low‐Intensity Near‐Infrared Light
A passive upconversion imaging system enables the observation of scenes illuminated by low‐intensity incoherent near‐infrared light from 750 to 930 nm, by converting it into the visible without the use of external power. The upconverter is enabled by triplet–triplet annihilation in a bulk heterojunction, with absorption enhanced by plasmonic resonators
Rabeeya Hamid +13 more
wiley +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
A low-cost and simple drop-casting method was used to fabricate a carbon nanodot (C-dot)/all-inorganic perovskite (CsPbBr3) nanosheet bilayer heterojunction photodetector on a SiO2/Si substrate.
Hassan Algadi +4 more
doaj +1 more source
This study establishes a materials‐driven framework for entropy generation within standard CMOS technology. By electrically rebalancing gate‐oxide traps and Si‐channel defects in foundry‐fabricated FDSOI transistors, the work realizes in‐materia control of temporal correlation – achieving task adaptive entropy optimization for reinforcement learning ...
Been Kwak +14 more
wiley +1 more source
Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction
The n-type Ce:ZnO (NL) grown using a hydrothermal method was deposited on a p-type boron-doped nanoleaf diamond (BDD) film to fabricate an n-Ce:ZnO NL/p-BDD heterojunction. It shows a significant enhancement in photoluminescence (PL) intensity and a more
Qinglin Wang +10 more
doaj +1 more source
In‐situ doping during growth of SnSe and subsequent attachment of SnS produces high‐quality lateral pn‐heterojunctions between van der Waals semiconductors. Electron beam induced current measurements demonstrate electrically active pn‐junctions, paving the way for devices that harness charge separation at lateral interfaces in layered heterostructures.
Peter Sutter +4 more
wiley +1 more source
Investigation of Band Alignment for Hybrid 2D-MoS2/3D-β-Ga2O3 Heterojunctions with Nitridation
Hybrid heterojunctions based on two-dimensional (2D) and conventional three-dimensional (3D) materials provide a promising way toward nanoelectronic devices with engineered features. In this work, we investigated the band alignment of a mixed-dimensional
Ya-Wei Huan +9 more
doaj +1 more source
Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji +9 more
wiley +1 more source
A biomolecule-assisted pyrolysis method has been developed to synthesize sulfur-doped graphitic carbon nitride (CNS) nanosheets. During the synthesis, sulfur could be introduced as a dopant into the lattice of carbon nitride (CN).
Hua Bing Tao +4 more
doaj +1 more source

