Results 271 to 280 of about 497,014 (306)

An evaporated heterojunction diode strain sensor

Proceedings of the IEEE, 1969
Using a new device concept, a unique semiconductor strain sensor has been demonstrated in the laboratory. It is a p-n heterojunction diode which is fabricated by vacuum evaporation techniques directly onto flexible substrate. This sensor's mechanical input properties are controlled by the choice of substrate, and it has a low-impedance voltage source ...
R.M. Moore, C.J. Busanovich
openaire   +1 more source

Red emission from ZnO-based double heterojunction diode

Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials, 2007
We have successfully realized high-quality red-band-gap Zn1-xCdxO films by remote-plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). By using the in-situ thermal annealing process, the compositional homogeneity of the Zn1-xCdxO films has been markedly improved.
Toshiya Ohashi, Kenji Yamamoto, Atsushi Nakamura, Jiro Temmyo   +3 more
openaire   +1 more source

SiC trench MOSFET with heterojunction diode for low switching loss and high short‐circuit capability

IET Power Electronics, 2019
A SiC trench MOSFET with a merged heterojunction diode is proposed and numerically analysed here. The merged heterojunction diode can effectively suppress the turn-on of the parasitic body diode in the proposed SiC trench MOSFET.
Junjie An, Shengdong Hu
semanticscholar   +1 more source

Vapor-Deposited, Thin-Film Heterojunction Diodes

Journal of Applied Physics, 1964
Deposited heterojunctions between semi-insulating CdS thin films and insulating materials have been fabricated, and their characteristics studied. Excellent rectification properties are obtained in which contact-field emission from the heterojunction carries the forward currents. Field emission of this type exhibits several characteristics which differ
R. S. Muller, R. Zuleeg
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Innovative Diodes based on Amorphous-Porous Silicon Heterojunction

MRS Proceedings, 1999
AbstractIn this paper we present an innovative diode based on the heterojunction between amorphous silicon and porous silicon grown on crystalline silicon. The device architecture gives several advantages. Deposition of amorphous silicon on porous material realises high performance junction at temperature less than 250°C and it passives the porous ...
DE ROSA, ROSARIO, La Ferrara V, Di Francia G, Quercia L, Roca F, Tucci M.   +5 more
openaire   +2 more sources

In Situ Study of Radiation Stability and Associated Conduction Mechanisms of Nb-Doped TiO2/p-Si Heterojunction Diode Under Swift Heavy Ion Irradiation

IEEE Transactions on Electron Devices, 2019
In situ current–voltage characteristics of Nb-doped TiO2/p-Si-based heterojunction diode have been studied under dense electronic excitations of 84-MeV Si6+ ions.
S. Gautam, Jitendra Pal Singh, Ram Singh, Naina Gautam, P. Trivedi, F. Singh   +5 more
semanticscholar   +1 more source

Electrical characterization of engineered ZnSe-GaAs heterojunction diodes

Journal of Crystal Growth, 1997
Electrical characterization of ZnSe/GaAs n-p heterodiodes grown by molecular beam epitaxy under different Zn/Se flux ratios is reported. Large tunability of the band discontinuity at the heterojunction is shown by photocurrent measurements at low temperature with conduction-band offsets in the range 0.26-0.75 eV.
Michele Lazzeri, Vittorio Pellegrini, Fabio Beltram, Marco Lazzarino, Jens J Paggel, Lucia Sorba, Silvia Rubini, Alberta Bonanni, Alfonso Franciosi   +8 more
openaire   +2 more sources

Electrical properties of α-Ir2O3/α-Ga2O3 pn heterojunction diode and band alignment of the heterostructure

Applied Physics Letters, 2018
Corundum-structured iridium oxide (α-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with α-Ga2O3. We fabricated α-Ir2O3/α-Ga2O3 pn heterojunction diodes and they showed well-defined rectifying current ...
Shin-ichi Kan, S. Takemoto, K. Kaneko, T. Isao, M. Sugimoto, Shinohe Takashi, S. Fujita   +6 more
semanticscholar   +1 more source

1.37 kV/12 A NiO/β-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

IEEE transactions on power electronics, 2021
H. Gong, F. Zhou, Weizong Xu, Xinxin Yu, Yang Xu, Yi Yang, F. Ren, S. Gu, Youdou Zheng, Rong Zhang, Hai Lu, Jiandong Ye   +11 more
semanticscholar   +1 more source

Heterojunction diodes nGaAs/pSi with ideal characteristics

Applied Surface Science, 1996
Heterojunction (HJ) diodes nGaAs/pSi have been fabricated from GaAs-on-Si heterostructures grown by molecular beam epitaxy and exhibited surprisingly ideal characteristics, despite the high density of misfit dislocations in the GaAs/Si interface. For n p 10 16 cm -3 an ideality factor, n, of 1.06 was determined from I-V measurements at 300 K while an
E. Aperathitis, M. Kayiambaki, V. Foukaraki, G. Halkias, P. Panayotatos, A. Georgakilas   +5 more
openaire   +1 more source