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Epitaxial ZnO/4H-SiC heterojunction diodes
2010 3rd International Nanoelectronics Conference (INEC), 2010High quality n-ZnO/p-SiC heterojunction diodes have been fabricated and their photoresponse properties have been investigated. X-ray diffraction (XRD) θ-2θ patterns show that highly c-axis oriented ZnO films were epitaxially grown on 4H-SiC. The RMS roughness is observed as low as 2 nm by atomic force microscope (AFM).
null Jae Sang Lee +6 more
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Heterojunction Laser Diodes for Room Temperature Operation
Optical Engineering, 1974A general review is presented of heterojunction laser diodes suitable for efficient room temperature operation. A variety of structures are described which allow either pulsed or CW operation under operating conditions useful in optical communication systems, particularly those using glass fibers.
H. Kressel +3 more
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Characteristics of heterojunction diode of C60/chloroindium phthalocyanine
Solid State Communications, 1995Abstract The C 60 /chloroindium phthalocyanine heterojunction device was fabricated, and its spectral response of photocurrent is reported. A band mode of the heterojunction device is also presented, which accounts for the observed results. We have concluded that the large photoresponse observed in both bias is mainly due to the photoinduced charge ...
A.D Xia +6 more
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2015
In the recent past, the development of microwave devices having low noise, high frequency, greater bandwidth, lesser switching time etc. has yielded devices with improved performance. These devices have been used in drying machines for textile, food and papers industries etc., for biomedical applications, for electronic warfare etc.
K. M. Gupta, Nishu Gupta
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In the recent past, the development of microwave devices having low noise, high frequency, greater bandwidth, lesser switching time etc. has yielded devices with improved performance. These devices have been used in drying machines for textile, food and papers industries etc., for biomedical applications, for electronic warfare etc.
K. M. Gupta, Nishu Gupta
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Heterojunction diodes nGaAs/pSi with ideal characteristics
Applied Surface Science, 1996Heterojunction (HJ) diodes nGaAs/pSi have been fabricated from GaAs-on-Si heterostructures grown by molecular beam epitaxy and exhibited surprisingly ideal characteristics, despite the high density of misfit dislocations in the GaAs/Si interface. For n p 10 16 cm -3 an ideality factor, n, of 1.06 was determined from I-V measurements at 300 K while an
E. Aperathitis +5 more
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Vapor-Deposited, Thin-Film Heterojunction Diodes
Journal of Applied Physics, 1964Deposited heterojunctions between semi-insulating CdS thin films and insulating materials have been fabricated, and their characteristics studied. Excellent rectification properties are obtained in which contact-field emission from the heterojunction carries the forward currents. Field emission of this type exhibits several characteristics which differ
R. S. Muller, R. Zuleeg
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Investigation of the Field in a Tunnel Diode with a Heterojunction
1971A system of equations is derived for calculating the field in a degenerate heterojunction, taking into account the presence of mobile carriers, special features of the energy bands, and the interfacial charge. Two cases are considered in these calculations: 1) heterojunctions between crystals with similar lattice constants; 2) heterojunctions in which ...
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The Electrical Characteristics Of A Phthalocyanine Heterojunction Diode
2020The electrical characteristics of nickel(II) phthalocyanine bearing 2'-aminophenylsulfanyl moieties/n-type silicon organic-on-inorganic semiconductor diode have been investigated by current-voltage characteristics. The diode indicates a good rectifying behavior.
Sakarya Üniversitesi/Fen-Edebiyat Fakültesi/Kimya Bölümü +1 more
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