Results 251 to 260 of about 4,656 (298)

Recombination Currents in a p-n Heterojunction Diode

Physica Status Solidi (a), 1977
The effect of carrier recombination in the depletion region on the I-U characteristics of a hetero-junction diode is considered. It is found, that recombination currents affect the I-U characteristics of symmetrically doped heterojunction diodes with large energy band offsets for the majority carrier type in the large gap material differently than ...
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An evaporated heterojunction diode strain sensor

Proceedings of the IEEE, 1969
Using a new device concept, a unique semiconductor strain sensor has been demonstrated in the laboratory. It is a p-n heterojunction diode which is fabricated by vacuum evaporation techniques directly onto flexible substrate. This sensor's mechanical input properties are controlled by the choice of substrate, and it has a low-impedance voltage source ...
R.M. Moore, C.J. Busanovich
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Si-CdS heterojunction memory diodes

Journal of Applied Physics, 1978
The I-V characterisitcs of pSi-nCdS heterojunction diodes have been investigated, the diodes being fabricated by growing epitaxial CdS films on silicon substrates under UHV conditions. Under certain fabrication conditions, viz., a substrate-acceptor doping ∼1019 cm−3, a CdS film resistivity ∼102Ω cm, and Schottky contacts to the CdS, it has been ...
W. Duncan, A. R. Smellie
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Heterojunction high speed switching diodes

1962 International Electron Devices Meeting, 1962
The Ge-GaAs n-n heterojunction has interesting rectifying properties due to the interface barrier between the two materials. The conduction mechanism of the junction will be described. The fact that the current is carried mainly by the majority carrier allows the diode to switch at high speed without suffering from carrier storage.
F.F. Fang, W.E. Howard
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AlGaAs/GaInP heterojunction tunnel diode

AIP Conference Proceedings, 1992
A p+‐AlGaAs/n+‐GaInP heterojunction tunnel diode with band gap Eg≊1.9 eV was fabricated by Atomic Layer Epitaxy growth mode using carbon and selenium as the p‐ and n‐type dopants, respectively. The doping levels of 1×1020/cm3 and 5×1019/cm3 were achieved both in the p‐ and n‐side of the diode, respectively.
D. Jung, C. A. Parker, J. Ramdani, S. M. Bedair   +3 more
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Tuning of ZnSe–GaAs band discontinuities in heterojunction diodes

Applied Physics Letters, 1996
The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers. We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ratios, with conduction band offsets as high as 0.75 eV for Se-rich interfaces, and as low as 0 ...
Vittorio Pellegrini, Marco Börger, Michele Lazzeri, Fabio Beltram, Jens J Paggel, Lucia Sorba, Silvia Rubini, Marco Lazzarino, Alfonso Franciosi, JeanMarc Bonard, JeanDaniel Ganiére   +10 more
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Electrical characterization of engineered ZnSe-GaAs heterojunction diodes

Journal of Crystal Growth, 1997
Electrical characterization of ZnSe/GaAs n-p heterodiodes grown by molecular beam epitaxy under different Zn/Se flux ratios is reported. Large tunability of the band discontinuity at the heterojunction is shown by photocurrent measurements at low temperature with conduction-band offsets in the range 0.26-0.75 eV.
Michele Lazzeri, Vittorio Pellegrini, Fabio Beltram, Marco Lazzarino, Jens J Paggel, Lucia Sorba, Silvia Rubini, Alberta Bonanni, Alfonso Franciosi   +8 more
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Innovative Diodes based on Amorphous-Porous Silicon Heterojunction

MRS Proceedings, 1999
AbstractIn this paper we present an innovative diode based on the heterojunction between amorphous silicon and porous silicon grown on crystalline silicon. The device architecture gives several advantages. Deposition of amorphous silicon on porous material realises high performance junction at temperature less than 250°C and it passives the porous ...
DE ROSA, ROSARIO, La Ferrara V, Di Francia G, Quercia L, Roca F, Tucci M.   +5 more
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Heterojunction Laser Diodes for Room Temperature Operation

Optical Engineering, 1974
A general review is presented of heterojunction laser diodes suitable for efficient room temperature operation. A variety of structures are described which allow either pulsed or CW operation under operating conditions useful in optical communication systems, particularly those using glass fibers.
H. Kressel, H. F. Lockwood, I. Ladany, M. Ettenberg   +3 more
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Majority Carrier Diodes (Tunnel Diode, Backward Diode, Schottky Barrier Diode, Ohmic Contacts, and Heterojunctions)

2015
In the recent past, the development of microwave devices having low noise, high frequency, greater bandwidth, lesser switching time etc. has yielded devices with improved performance. These devices have been used in drying machines for textile, food and papers industries etc., for biomedical applications, for electronic warfare etc.
K. M. Gupta, Nishu Gupta
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