Results 231 to 240 of about 4,641 (290)
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Millimeter Wave Heterojunction MITATT Diodes
1987 IEEE MTT-S International Microwave Symposium Digest, 1987A design theory, a fabrication procedure, and experimental results for heterojunction millimeter-wave transit-time devices operating in the IMPATT (impact ionization avalanche transit-time), MITATT (mixed panel-avalanche transit-time), or TUNNETT (tunnel transit-time) mode are presented.
N.S. Dogan +3 more
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Nanofluidic Diodes Based on Nanotube Heterojunctions
Nano Letters, 2009The mechanism of tuning charge transport in electronic devices has recently been implemented into the nanofluidic field for the active control of ion transport in nanoscale channels/pores. Here we report the first synthesis of longitudinal heterostructured SiO(2)/Al(2)O(3) nanotubes.
Ruoxue, Yan +3 more
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Heterojunction PIN diode switch
IEEE MTT-S International Microwave Symposium Digest, 2003, 2003This paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a replacement for the homojunction GaAs PIN diodes commonly used in microwave systems as a control element for commercial and military switch applications up through millimeter wave frequencies. In particular, a single heterojunction PIN diode, when simulated at a bias of
D. Hoag +4 more
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AlN/diamond heterojunction diodes
Applied Physics Letters, 2003An aluminum nitride/diamond p–n heterojunction has been realized by plasma-induced molecular-beam epitaxy growth of AlN on (100) diamond. The epitaxial nature of this heterojunction has been confirmed by high-resolution x-ray diffraction. The silicon-doped AlN film (n-type) on the natural boron-doped (p-type) diamond substrate formed a heterobipolar ...
Miskys, C. +6 more
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Fabrication of p-Si/n-ZnO:Al heterojunction diode and determination of electrical parameters [PDF]
Journal of Molecular Structure, 2018 WOS: 000425075900078We present a fundamental experimental study of a microwave assisted chemical bath deposition (MW-CBD) method for Al doped ZnO films.
Saliha Ilican +2 more
exaly +2 more sources
An Intrinsic Carbon Nanotube Heterojunction Diode
The Journal of Physical Chemistry B, 1999Carbon nanotubes are metallic, semimetallic, or semiconducting, depending on their helicity. This raises the possibility of forming nanoelectronic devices by joining tubes of differing helicity. We report calculations of the electronic properties of pairs of “armchair” and “zigzag” nanotubes joined linearly. The linear junction in each case consists of
Gabin Treboux +2 more
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IEEE Transactions on Electron Devices, 1992
Heterojunction IMPATT diodes, which incorporate an abrupt GaAs/Al/sub 0.3/Ga/sub 0.7/As p/N heterojunction in place of the standard p/n junction, have shown a number of significant properties that represent a considerable technological advance. Ku-band experimental devices exhibit up to 2.0 dB higher power, superior DC characteristics, and 3-6 dB less ...
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Heterojunction IMPATT diodes, which incorporate an abrupt GaAs/Al/sub 0.3/Ga/sub 0.7/As p/N heterojunction in place of the standard p/n junction, have shown a number of significant properties that represent a considerable technological advance. Ku-band experimental devices exhibit up to 2.0 dB higher power, superior DC characteristics, and 3-6 dB less ...
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High-frequency, 6.2ÅpN heterojunction diodes
Solid-State Electronics, 2012Abstract Sb-based pN heterojunction diodes at 6.2 A, consisting of narrow bandgap p -type In 0.27 Ga 0.73 Sb and wide bandgap n -type In 0.69 Al 0.41 As 0.41 Sb 0.59 , have been fabricated and measured. These diodes show excellent electrical characteristics with an ideality factor of 1.2 and high current density.
James G. Champlain +4 more
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A Functional Material Based Heterojunction Diode
Silicon, 2017In this study, the phosphotungstic acid /p-Si diode was fabricated by a drop coating method. The fabricated diode had excellent rectifying properties. The electrical properties of the diode were investigated in the temperature range of 50-400 K. The optical band gap of the phosphotungstic acid film was determined and found to be 3.66 eV. The electrical
H. M. El-Nasser +7 more
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AlGaAs anode heterojunction PIN diodes
physica status solidi c, 2013AbstractThis paper describes the development of a heterojunction AlGaAs/GaAs PIN diode as a revolutionary improvement as compared to the homojunction GaAs PIN diode commonly used in microwave systems for commercial and military applications. In a heterojunction device the injected carriers from the junction are confined by the bandgap discontinuity ...
T. Boles, J. Brogle, D. Hoag, D. Carlson
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