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An evaporated heterojunction diode strain sensor
Proceedings of the IEEE, 1969Using a new device concept, a unique semiconductor strain sensor has been demonstrated in the laboratory. It is a p-n heterojunction diode which is fabricated by vacuum evaporation techniques directly onto flexible substrate. This sensor's mechanical input properties are controlled by the choice of substrate, and it has a low-impedance voltage source ...
R.M. Moore, C.J. Busanovich
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Si-CdS heterojunction memory diodes
Journal of Applied Physics, 1978The I-V characterisitcs of pSi-nCdS heterojunction diodes have been investigated, the diodes being fabricated by growing epitaxial CdS films on silicon substrates under UHV conditions. Under certain fabrication conditions, viz., a substrate-acceptor doping ∼1019 cm−3, a CdS film resistivity ∼102Ω cm, and Schottky contacts to the CdS, it has been ...
W. Duncan, A. R. Smellie
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Chapter 2 Heterojunction Laser Diodes
1979Publisher Summary This chapter deals with the design and operating characteristics of heterojunction semiconductor laser diodes. In particular, the threshold current densities at room temperature have been reduced by orders of magnitude permitting cw operation.
Henry Kressel, Jerome K. Butler
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Heterojunction high speed switching diodes
1962 International Electron Devices Meeting, 1962The Ge-GaAs n-n heterojunction has interesting rectifying properties due to the interface barrier between the two materials. The conduction mechanism of the junction will be described. The fact that the current is carried mainly by the majority carrier allows the diode to switch at high speed without suffering from carrier storage.
F.F. Fang, W.E. Howard
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Recombination Currents in a p-n Heterojunction Diode
Physica Status Solidi (a), 1977The effect of carrier recombination in the depletion region on the I-U characteristics of a hetero-junction diode is considered. It is found, that recombination currents affect the I-U characteristics of symmetrically doped heterojunction diodes with large energy band offsets for the majority carrier type in the large gap material differently than ...
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AlGaAs/GaInP heterojunction tunnel diode
AIP Conference Proceedings, 1992A p+‐AlGaAs/n+‐GaInP heterojunction tunnel diode with band gap Eg≊1.9 eV was fabricated by Atomic Layer Epitaxy growth mode using carbon and selenium as the p‐ and n‐type dopants, respectively. The doping levels of 1×1020/cm3 and 5×1019/cm3 were achieved both in the p‐ and n‐side of the diode, respectively.
D. Jung +3 more
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Tuning of ZnSe–GaAs band discontinuities in heterojunction diodes
Applied Physics Letters, 1996The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers. We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ratios, with conduction band offsets as high as 0.75 eV for Se-rich interfaces, and as low as 0 ...
Vittorio Pellegrini +10 more
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Electrical characterization of engineered ZnSe-GaAs heterojunction diodes
Journal of Crystal Growth, 1997Electrical characterization of ZnSe/GaAs n-p heterodiodes grown by molecular beam epitaxy under different Zn/Se flux ratios is reported. Large tunability of the band discontinuity at the heterojunction is shown by photocurrent measurements at low temperature with conduction-band offsets in the range 0.26-0.75 eV.
Michele Lazzeri +8 more
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Innovative Diodes based on Amorphous-Porous Silicon Heterojunction
MRS Proceedings, 1999AbstractIn this paper we present an innovative diode based on the heterojunction between amorphous silicon and porous silicon grown on crystalline silicon. The device architecture gives several advantages. Deposition of amorphous silicon on porous material realises high performance junction at temperature less than 250°C and it passives the porous ...
DE ROSA, ROSARIO +5 more
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Heterojunction double-barrier diodes for logic applications
Applied Physics Letters, 1987The use of heterojunction double-barrier diodes in logic circuits is examined. Switching time limitations are estimated based on circuit considerations and device architecture. Dispersion effects involving quantum mechanical resonant tunneling time delay are also included.
H. C. Liu, D. D. Coon
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