Results 151 to 160 of about 46,004 (317)

Transient Laser‐Shocked Synthesis of Amorphous Layer‐Supported Metal Nanocrystals for Efficient Nitrate Reduction

Advanced Materials, EarlyView.
A general, versatile laser‐shock synthesis process is reported to produce various bimetallic CuNi, CuFe, CuCo, and medium‐entropy CuFeCoNi heterostructures, in which crystalline metal nanoparticles are anchored to amorphous hydroxide supports. During nitrate reduction reaction, the heterostructures undergo dynamic amorphous/crystalline reconstruction ...
Weihua Guo, Jixun Zhang, Siwei Zhang, Yangbo Ma, Yun Song, Jianjun Su, Zihao Li, Yinger Xin, Qiang Zhang, Mingming He, Ruixuan Wang, Rui Xue, Shibo Xi, Ying Wang, Shenlong Zhao, Tao Yang, Zhengxiao Guo, Ben Zhong Tang, Ruquan Ye   +18 more
wiley   +1 more source

Homo- and Heterostructure Formation in Semiconductors by Laser Radiation: First Stage of Quantum Cone Formation

A possibility of formingquantum cones (QC) by Nd:YAG laser radiation on the surface of semiconductorssuch as Si and Ge crystals, and SiGe and CdZnTe solid solutions has been shown.A two-stage mechanism of quantum cone formation has been proposed.
Daukšta, Edvīns, Sobolev, N., Medvids, Artūrs, Onufrijevs, Pāvels   +3 more
core   +1 more source

Heterostructured materials

Progress in Materials Science, 2023
Yuntian Zhu, Xiaolei Wu
openaire   +1 more source

Interfacial Acid Sites‐Mediated ZnO‐Based Electrocatalysts for Sustainable Dual‐Pathway H2O2 Production and Rechargeable Zn‐H2O2 Electrochemical Cell

Advanced Materials, EarlyView.
In this work, a synergistic strategy introduces interfacial acid sites, oxygen vacancies, and built‐in electric field into ZnSe/ZnO heterojunction to optimize its electronic structure and electrode micro‐environment. This overcomes sluggish oxygen reduction reaction kinetics and low H2O2 selectivity, achieving record H2O2 productivity (754.4 M gcat−1 ...
Lijun Yang, Sitong Liu, Wencheng He, Fengzhan Sun, Shubing Bi, Hongge Pan, Lingfeng Zhu, Tianyi Ma, Lei Zhang   +8 more
wiley   +1 more source

Heterostructure Formation in Semiconductors by Nd:YAG Laser Radiation

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Daukšta, Edvīns, Medvids, Artūrs, Onufrijevs, Pāvels   +2 more
core  

BREAKING UP OF MISFIT DISLOCATIONS IN GAASIN0.3GA0.7AS/GAAS HETEROSTRUCTURE

, 1995
The effect of GaAs cap layer with different thicknesses in the GaAs/In0.3Ga0.7As/GaAs heterostructure on misfit dislocation is investigated with transmission electron microscopy, and it is found that lines of misfit dislocation break up and move out of ...
WU J, LI W, FAN TW, DUAN XF, WANG ZG
core  

Magnetism of LaAlO3/SrTiO3 heterostructure [PDF]

, 2014
Li, Lu. (2014). Magnetism of LaAlO3/SrTiO3 heterostructure.
Li, Lu
core  

Engineering CO2 Reduction Pathways via Alloy‐Support Interactions in Li‐CO2 Batteries

Advanced Materials, EarlyView.
Alloy‐support interactions in RuCu/NC induce interfacial charge redistribution and shift d‐band centers, steering CO2 reduction from Li2CO3 to metastable Li2C2O4. This pathway engineering lowers the rate‐determining barrier and suppresses carbonate formation, enabling high discharge voltage (3.23 V) in Li‐CO2 batteries with reduced overpotential (0.50 ...
Liang Sun, Xindan Zhang, Guang Feng, Guoqiang Zhao, Bernt Johannessen, Guanjie Li, Shilin Zhang, Hongge Pan, Zaiping Guo   +8 more
wiley   +1 more source

From Behavior to Dynamics: Decoding Carrier Roles in Cu‐based Photocathodes for Solar‐Driven CO2 Reduction

Advanced Materials, EarlyView.
The performance of Cu‐based photocathodes in photoelectrochemical CO2 reduction is not governed by catalytic sites alone, but by the dynamic journey of photogenerated carriers. This review decodes how carrier generation, recombination, transport, accumulation, extraction, and electrolyte coupling shape catalytic activity, selectivity, and stability ...
Yi‐Cheng Wang, Chenyu Xu, Peng‐Fei Sui, Yi Liu, Xiaolei Wang, Jing‐Li Luo   +5 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source