Results 171 to 180 of about 19,101 (269)

Multiscale Design and Simulation of CdSe/ZnS/MoTe₂ Hybrid Photodetectors. [PDF]

Sensors (Basel)
Hussain S, Liu Y, Wazir N, Krishna K, Tao L.   +4 more
europepmc   +1 more source

Rapid Room‐Temperature Ethanol Sensing in Bi2MoO6/rGO Heterostructures: Weak Adsorption‐Driven Charge Modulation

Advanced Materials Technologies, EarlyView.
This work establishes Bi2MoO6/rGO heterostructures as a mechanism‐guided platform for high‐performance room‐temperature ethanol gas detection by showing that modest adsorption, in conjunction with dynamic interfacial band modulation, enables rapid charge‐transfer.
Sagarika Panda, Savita Mehlawat, Kwanghyeon Jo, Neeraj Dhariwal, Chang Woo Myung, Mohd. Arif, Sung Bum Kang, Amit Sanger   +7 more
wiley   +1 more source

Correction: Highly sensitive electrochemical detection of hazardous 2,4-dinitrophenylhydrazine using MgCo-TiO₂/g-C₃N₄ heterostructure nanocomposites. [PDF]

RSC Adv
Jikamo SC, Rao TS, Shyamala P, Supriya SS, Nayak SR, Kadiyala N, Dokka WT, Chandra MR, Kishore MV.   +8 more
europepmc   +1 more source

Advanced Manufacturing of Composite‐Based Systems for Energy Applications

Advanced Materials Technologies, EarlyView.
Advanced manufacturing enables the integration of polymers, ceramics, metal oxides, and composites into architected microstructures with tailored transport pathways. By coupling material selection, manufacturing strategy, and structural design, multifunctional energy systems can simultaneously improve electrochemical performance, thermal management ...
Sri Vaishnavi Thummalapalli, Dhanush Patil, Libin Yang, M. Taylor Sobczak, Anshul Kulkarni, Xiao Sun, Arunachalam Ramanathan, Tiantian Li, Ramaraja P. Ramasamy, Jason J. Locklin, Yanyu Chen, Xianqiao Wang, Arunachala Mada Kannan, Kenan Song   +13 more
wiley   +1 more source

Electrically Tunable Tunneling and Spectral Response in WSe₂/h-BN/CdSe/Graphene Heterostructure. [PDF]

Small
Lee SH, Teku JA, Jeong MH, Ahn JH, Chae WS, Kwak D, Lee JS.   +6 more
europepmc   +1 more source

O Radical‐Induced n‐to‐p Transition in PbS Quantum Dots Enabling Enhanced and Stable Photogating in QD/IGZO SWIR Phototransistors

Advanced Materials Technologies, EarlyView.
An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob, Solbee Lee, Hansol Jeong, Sabiqun Nahar, Jin Jang   +4 more
wiley   +1 more source

Diffusive Electronic Transport Coefficients of Graphene/Bi₂Se₃ Heterostructures: Insights from First-Principles Calculations. [PDF]

ACS Omega
de la Rosa-Jasso AJ, Acosta-Martínez RA, Hernández-Tecorralco J, Meza-Montes L.   +3 more
europepmc   +1 more source

Defect‐Engineered ZnO Nanowire Arrays for Flexible Room‐Temperature Hydrogen Sensors

Advanced Materials Technologies, EarlyView.
Fabrication process of patterned ZnO nucleation sites on a flexible polyimide (PI) substrate. Top/tilted‐view SEM images of ordered ZnO nanoflower arrays confined within patterned circular regions. AFM topography map with height data revealing a disk‐array structure, where the patterned regions (marked by a red dot circle) are elevated by ∼2 µm ...
Jun‐Ting Wang, Imran Khan, Jhen‐De You, Fan‐Hua Kong, Chang‐Mou Wu, Po‐Kai Chiu, Ray‐Hua Horng, Jinn P. Chu   +7 more
wiley   +1 more source

Ligand-amplified quantum tunneling in polymer-mediated artificial photosystems. [PDF]

Chem Sci
Su P, Lin SH, Xiao FX.
europepmc   +1 more source

Amorphous IGZO, Crystalline IGO, Amorphous IGZO Triple Active Layer With 2D Electron Gas at Both Interfaces for High Performance TFTs

Advanced Materials Technologies, EarlyView.
The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee, Taebin Lim, Seungho Lee, Sunaina Priyadarshi, Jin Jang   +4 more
wiley   +1 more source