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Extending the detection limit: innovations in infrared quantum dot photodetectors reaching up to 18 μm. [PDF]
Light Sci ApplWang CW, Wang QJ.
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HgCdTe barrier infrared detectors
Progress in Quantum Electronics, 2016Abstract In the last decade, new strategies to achieve high-operating temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, and multistage (cascade) infrared detectors. The ability to tune the positions of the conduction and valence band edges independently in a broken-gap type-
Małgorzata Kopytko, Antoni Rogalski
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MRS Proceedings, 1997
AbstractIn this paper we discuss our ab initio calculations of native point defect and impurity densities in HgCdTe. Our calculations have explained the experimental finding in general, and in particular have explained the in-active incorporation of the group VII elements under mercury-deficient conditions; have shown that the group I elements have a ...
M. A. Berding, A. Sher
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AbstractIn this paper we discuss our ab initio calculations of native point defect and impurity densities in HgCdTe. Our calculations have explained the experimental finding in general, and in particular have explained the in-active incorporation of the group VII elements under mercury-deficient conditions; have shown that the group I elements have a ...
M. A. Berding, A. Sher
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Dislocations in HgCdTe-CdTe and HgCdTe-CdZnTe heterojunctions
Journal of Crystal Growth, 1988Abstract Mechanisms that govern the generation and movement of dislocations in (111) heterojunctions of HgCdTe-CdTe and HgCdTe-CdZnTe grown by liquid phase epitaxy have been investigated with etch pit studies. The density and distribution of the misfit dislocations in these heterojunctions have been measured quantitatively and analyzed to clarify the
H. Takigawa, M. Yoshikawa, T. Maekawa
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Dislocations in HgCdTe/CdTe and HgCdTe/CdZnTe heterojunctions
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1987Behavior of misfit and threading dislocations in HgCdTe/CdTe and HgCdTe/CdZnTe heterojunctions has been investigated by the dislocation-pit etching technique. It is confirmed that by lattice matching the linear pit density caused by misfit dislocations on (1̄10) cleaved plane was decreased to 500 cm−1, which is about 1% of that obtained using CdTe ...
M. Yoshikawa +4 more
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SPIE Proceedings, 1989
The basic modes of electrical operation of photoconductive optical radiation detectors are analyzed. The nonlinearity inherent in "voltage mode" measurements can be eliminated by using "current mode" measurements. A HgCdTe photoconductive radiometer has been designed, based on this analysis, which measures the current through a biased detector. A built-
G. Eppeldauer, L. Novak
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The basic modes of electrical operation of photoconductive optical radiation detectors are analyzed. The nonlinearity inherent in "voltage mode" measurements can be eliminated by using "current mode" measurements. A HgCdTe photoconductive radiometer has been designed, based on this analysis, which measures the current through a biased detector. A built-
G. Eppeldauer, L. Novak
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2000
Publisher Summary Significant advances in the areas of mercury cadmium telluride (HgCdTe)-material growth, detector array fabrication, and readout integrated circuit design and fabrication have been accumulated over the past years. These advances have led to the demonstration of high resolution-, low-noise-, and large-format reliable focal plane ...
A DSOUZA, P WIJEWARNASURIYA, J GPOKSHEVA
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Publisher Summary Significant advances in the areas of mercury cadmium telluride (HgCdTe)-material growth, detector array fabrication, and readout integrated circuit design and fabrication have been accumulated over the past years. These advances have led to the demonstration of high resolution-, low-noise-, and large-format reliable focal plane ...
A DSOUZA, P WIJEWARNASURIYA, J GPOKSHEVA
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SPIE Proceedings, 2009
Since the late '60's Teledyne Imaging Sensors (TIS-formerly Rockwell Science Center) has developed IR sensor technology and produced IR sensors for both military and commercial applications. In the late '70's, after excursions into the Pb-salts and InAsSb alloys, TIS began to study HgCdTe and has pursued this materials system aggressively ever since.
W. E. Tennant, J. M. Arias, J. Bajaj
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Since the late '60's Teledyne Imaging Sensors (TIS-formerly Rockwell Science Center) has developed IR sensor technology and produced IR sensors for both military and commercial applications. In the late '70's, after excursions into the Pb-salts and InAsSb alloys, TIS began to study HgCdTe and has pursued this materials system aggressively ever since.
W. E. Tennant, J. M. Arias, J. Bajaj
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1983
HgCdTe heterojunctions consisting of a wide band gap n-type Hg1−xCdxTe layer grown epitaxially on a narrow band gap p-type Hg1−yCdyTe substrate (x>y) were studied. The heterojunction transition region between x and y materials was found to be graded over distances of about 0.4 to 0.8 μm. The position of the p–n junction depletion layer within
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HgCdTe heterojunctions consisting of a wide band gap n-type Hg1−xCdxTe layer grown epitaxially on a narrow band gap p-type Hg1−yCdyTe substrate (x>y) were studied. The heterojunction transition region between x and y materials was found to be graded over distances of about 0.4 to 0.8 μm. The position of the p–n junction depletion layer within
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989
At North Carolina State University, we have recently employed photoassisted molecular-beam epitaxy (MBE) to successfully prepare p- and n-type modulation-doped HgCdTe. The modulation-doped HgCdTe samples were grown on lattice-matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research Center.
Jeong W. Han +8 more
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At North Carolina State University, we have recently employed photoassisted molecular-beam epitaxy (MBE) to successfully prepare p- and n-type modulation-doped HgCdTe. The modulation-doped HgCdTe samples were grown on lattice-matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research Center.
Jeong W. Han +8 more
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