Results 131 to 140 of about 1,330 (176)
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The behavior of oxygen in HgCdTe
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1985The behavior of oxygen in HgCdTe has been studied using a liquid phase epitaxial growth technique. The oxygen has been found to act as a donor impurity in Hg0.7Cd0.3Te. High-purity Hg0.7Cd0.3Te crystals with carrier concentration of less than 5×1013 cm−3 can be obtained reproducibly by complete deoxidization of the growth solution. As a result, carrier
M. Yoshikawa +3 more
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989
At North Carolina State University, we have recently employed photoassisted molecular-beam epitaxy (MBE) to successfully prepare p- and n-type modulation-doped HgCdTe. The modulation-doped HgCdTe samples were grown on lattice-matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research Center.
Jeong W. Han +8 more
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At North Carolina State University, we have recently employed photoassisted molecular-beam epitaxy (MBE) to successfully prepare p- and n-type modulation-doped HgCdTe. The modulation-doped HgCdTe samples were grown on lattice-matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research Center.
Jeong W. Han +8 more
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Properties of the HgCdTe films
SPIE Proceedings, 1994The HgCdTe films had been made by vacuum evaporation. If the substrate temperature is about at 100 degree(s)C, the size of the crystallite of the HgCdTe films is about 0.1 micrometers , the size decrease with the substrate temperature decreasing in the range down to about 50 degree(s)C.
Fei-Fei Wu +4 more
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Electronic properties of HgCdTe
Journal of Vacuum Science and Technology, 1982The electronic properties of HgCdTe relevant to the operation of photoconductive, photovoltaic, and metal–insulator–semiconductor (MIS) infrared devices will be reviewed. Particular consideration will be given to minority and majority carrier phenomena such as mobility, lifetime, and transition rates occurring in the bulk, surface, and depletion ...
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Semiconductor Science and Technology, 1991
The critical steps in the development of MOVPE for the fabrication of MCT focal plane arrays (FPAs) are outlined. Improved purity of the source organometallics has enabled background donor concentrations in the mid 1014 cm-3 to be achieved, together with controlled back doping with donors or acceptors.
S J C Irvine +4 more
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The critical steps in the development of MOVPE for the fabrication of MCT focal plane arrays (FPAs) are outlined. Improved purity of the source organometallics has enabled background donor concentrations in the mid 1014 cm-3 to be achieved, together with controlled back doping with donors or acceptors.
S J C Irvine +4 more
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HgCdTe technology in Australia
SPIE Proceedings, 2009In this paper a brief history of HgCdTe based research and development in Australia is presented. It describes some of the motivation behind decisions made in Australia related to the HgCdTe international research effort, the early stages of development of HgCdTe materials and device research in Australia, and main research activities in Australia ...
J. Antosziewski, J. M. Dell, L. Faraone
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SPIE Proceedings, 1989
The basic modes of electrical operation of photoconductive optical radiation detectors are analyzed. The nonlinearity inherent in "voltage mode" measurements can be eliminated by using "current mode" measurements. A HgCdTe photoconductive radiometer has been designed, based on this analysis, which measures the current through a biased detector. A built-
G. Eppeldauer, L. Novak
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The basic modes of electrical operation of photoconductive optical radiation detectors are analyzed. The nonlinearity inherent in "voltage mode" measurements can be eliminated by using "current mode" measurements. A HgCdTe photoconductive radiometer has been designed, based on this analysis, which measures the current through a biased detector. A built-
G. Eppeldauer, L. Novak
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Simulation of Small-Pitch HgCdTe Photodetectors
Journal of Electronic Materials, 2017Recent studies indicate as an important technological step the development of infrared HgCdTe-based focal plane arrays (FPAs) with sub-wavelength pixel pitch, with the advantage of smaller volume, lower weight, and potentially lower cost. In order to assess the limits of pixel pitch scaling, we present combined three-dimensional optical and electrical ...
VALLONE, MARCO ERNESTO +6 more
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2015
In this chapter we will consider the performance of HgCdTe staring FPAs operating in all of the IR spectral bands, under a wide variety of extreme conditions, such as high operating temperatures, reduced backgrounds, and large reverse bias, as indicated by data currently published in the open literature.
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In this chapter we will consider the performance of HgCdTe staring FPAs operating in all of the IR spectral bands, under a wide variety of extreme conditions, such as high operating temperatures, reduced backgrounds, and large reverse bias, as indicated by data currently published in the open literature.
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2014
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