Results 111 to 120 of about 1,330 (176)

Optoelectronic performance prediction of HgCdTe homojunction photodetector in long wave infrared spectral region using traditional simulations and machine learning models. [PDF]

Sci Rep
Bansal S, Jain A, Kumar S, Kumar A, Kumar PR, Prakash K, Soliman MS, Islam MS, Islam MT.   +8 more
europepmc   +1 more source

Band Engineering and Structural-Geometrical Engineering in 2D/3D van der Waals Heterostructures for Advanced Photodetection and Intelligent Sensing. [PDF]

Nanomicro Lett
Yang M, Gong K, Cui Y, Liu S, Li G, Lin S.   +5 more
europepmc   +1 more source

2.05 μm high-energy thulium-doped fibre amplifier based on backward pumping. [PDF]

Sci Rep
Yang C, Zheng B, Huang J, Li X, Li Y, Dong K, Ju Y.   +6 more
europepmc   +1 more source

Thermal Force Imaging of Hot Electrons in Operando Nanodevices. [PDF]

Nat Commun
Lu W, Xu Z, Zhang H, Biehs SA, Kittel A, Qin L, Gong X, Xue H, Song Y, Zhong Z, Chen S, Ding K, Lu W, An Z.   +13 more
europepmc   +1 more source

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Dopants in HgCdTe

MRS Proceedings, 1997
AbstractIn this paper we discuss our ab initio calculations of native point defect and impurity densities in HgCdTe. Our calculations have explained the experimental finding in general, and in particular have explained the in-active incorporation of the group VII elements under mercury-deficient conditions; have shown that the group I elements have a ...
M. A. Berding, A. Sher
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Dislocations in HgCdTe/CdTe and HgCdTe/CdZnTe heterojunctions

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1987
Behavior of misfit and threading dislocations in HgCdTe/CdTe and HgCdTe/CdZnTe heterojunctions has been investigated by the dislocation-pit etching technique. It is confirmed that by lattice matching the linear pit density caused by misfit dislocations on (1̄10) cleaved plane was decreased to 500 cm−1, which is about 1% of that obtained using CdTe ...
M. Yoshikawa, K. Maruyama, T. Saito, T. Maekawa, H. Takigawa   +4 more
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Dislocations in HgCdTe-CdTe and HgCdTe-CdZnTe heterojunctions

Journal of Crystal Growth, 1988
Abstract Mechanisms that govern the generation and movement of dislocations in (111) heterojunctions of HgCdTe-CdTe and HgCdTe-CdZnTe grown by liquid phase epitaxy have been investigated with etch pit studies. The density and distribution of the misfit dislocations in these heterojunctions have been measured quantitatively and analyzed to clarify the
H. Takigawa, M. Yoshikawa, T. Maekawa
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HgCdTe at Teledyne

SPIE Proceedings, 2009
Since the late '60's Teledyne Imaging Sensors (TIS-formerly Rockwell Science Center) has developed IR sensor technology and produced IR sensors for both military and commercial applications. In the late '70's, after excursions into the Pb-salts and InAsSb alloys, TIS began to study HgCdTe and has pursued this materials system aggressively ever since.
W. E. Tennant, J. M. Arias, J. Bajaj
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Photoplasticity in HgCdte

MRS Proceedings, 1983
ABSTRACTA time delay has been observed in HgCdTe in the photoplastic response of these crystals. Both the magnitude of the time delay and the total change in stress, Δσ, are dependent on the wavelength of the light. These observations provide a basis for establishing that the photoplastic process is a dynamic one, in contrast to prior treatments of the
J. M. Galligan, J. Pellegrino, T. Manzur
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HgCdTe intrared detectors

2000
Publisher Summary Significant advances in the areas of mercury cadmium telluride (HgCdTe)-material growth, detector array fabrication, and readout integrated circuit design and fabrication have been accumulated over the past years. These advances have led to the demonstration of high resolution-, low-noise-, and large-format reliable focal plane ...
A DSOUZA, P WIJEWARNASURIYA, J GPOKSHEVA
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