Results 91 to 100 of about 4,962 (162)
HgCdTe as a playground for massless fermions
International audienceBulk films and heterostructures based on HgCdTe compounds can be engineered to fabricate “gapped-at-will” structures. Therefore, 1D [1], 2D [2] and even 3D [3] massless particles can be observed in topological phase transitions ...
Teppe, Frédéric +1 more
core
Study of diffusion mechanisms in HgCdTe alloys for infrared detection
Ces travaux de thèse ont développé l’ensemble des problématiques de diffusion liées à la fabrication de la technologie HgCdTe p/n, avec pour objectif l’obtention d’un modèle numérique permettant la simulation complète de la diode.
Grenouilloux, Thomas
core
Mbe Growth and Characterization of Lwir HgCdTe
We have grown high-mobility LWIR HgCdTe thin films on CdTe substrates, using molecular beam epitaxy (MBE). The structural, optical, and electrical properties of these epilayers were determined by SEM, DCRC, FTIR, and Hall effect measurements.
J. Decarlo +3 more
core +1 more source
Development of High-Performance Graphene-HgCdTe Detector Technology for Mid-Wave Infrared Applications [PDF]
A high-performance graphene-based HgCdTe detector technology is being developed for sensing over the mid-wave infrared (MWIR) band for NASA Earth Science, defense, and commercial applications.
Ghosh, Avik W. +6 more
core
Nanoimprint induced electrical type conversion in HgCdTe
We report supporting evidence that is consistent with p- to n-type conversion of HgCdTe that is induced by surface indentation, as the progress towards the fabrication of photovoltaic infrared detectors by direct imprinting.
M. Martyniuk +21 more
core +1 more source
Optical transmittance of CdTe/HgCdTe/CdZnTe structures
The infrared (IR) optical transmittance of the liquid phase epitaxy (LPE) mono-crystalline p-type MCT (Hg1-xCdxTe (x » 0.28)) layers grown on (111) surface of dielectric single crystal substrates CZT (Cd0.96Zn0.04Te) having the same lattice constant as ...
Fedir Sizov, Zinoviia Tsybrii
doaj +1 more source
A time delay has been observed in HgCdTe in the photoplastic response of these crystals. Both the magnitude of the time delay and the total change in stress, Δσ, are dependent on the wavelength of the light.
T. Manzur, J. Pellegrino, J. M. Galligan
core +1 more source
Electrical type conversion of p-type HgCdTe induced by nanoimprinting
A nanoimprinting method was used to generate square imprints and arrays of imprints ranging in lateral dimension from 1 μm to 50 μm in p-type HgCdTe. Laser Beam Induced Current (LBIC) characterization shows electrical type conversion around each imprint ...
MacIntyre, D. +27 more
core +2 more sources
Ultrafast photoconductivity dynamics in narrow-gap HgCdTe films
Mercury cadmium telluride (Hg1−xCdxTe or MCT) is the premier material for infrared detection. However, despite its importance, studies exploring the ultrafast photoresponse in this semiconductor alloy are limited.
N. B. Refvik +10 more
doaj +1 more source
Design of readout circuits for mid-wavelength IR photodiode arrays
Discussed are the problems of designing readout circuits for IR-wavelength photodiode arrays intended, for example, for reading and processing information from array radiation detectors based on materials such as InSb and HgCdTe. The potential functional
V. P. Reva, F. F. Sizov
doaj

