Results 81 to 90 of about 4,962 (162)
Hydrogenated Amorphous Silicon Photoresists for Hgcdte Patterning
, 1997 A process to use a hydrogenated amorphous silicon (a-Si:H) film as a dry photoresist mask for plasma etching of HgCdTe has been demonstrated. The a-Si:H films were deposited using standard plasma enhanced chemical vapor deposition with pure silane as the
C. DeHart +4 more
core +1 more source
LWIR HgCdTe: Innovative detectors in an incumbent technology [PDF]
, 1990 HgCdTe is the current material of choice for high performance imagers operating at relatively high temperatures. Its lack of technological maturity compared with silicon and wide-band gap III-V compounds is more than offset by its outstanding IR ...
Tennant, William E.
core
Theoretical modelling of MWIR thermoelectrically cooled nBn HgCdTe detector [PDF]
, 2013 The paper reports on the medium wavelength infrared (MWIR) unipolar barrier infrared detector (UBIRD) nBn/B-n type (n-type barrier) HgCdTe detector’s photoelectrical performance.
Rogalski, A., Martyniuk, P.
core
Diffusive-Probabilistic Model for Inter-Pixel Crosstalk in HgCdTe Focal Plane Arrays
IEEE Journal of the Electron Devices Society, 2018 A closed-form probabilistic model for inter-pixel crosstalk in planar HgCdTe focal plane arrays is presented, providing simple expressions of crosstalk as function of device parameters like the pixel pitch, the absorber thickness, and the extension of ...
Marco Vallone +6 more
doaj +1 more source
HgCdTe MBE Technology: A Focus on Chemical Doping
, 1994 HgCdTe MBE technology is becoming a mature growth technology for infrared focal plane array applications. The ability to dope HgCdTe with In(n-type) and As(p-type) dopants in-situ provides greater flexibilities for fabricating heterojunction devices.
Owen K. Wu
core +1 more source
Bandgap Engineered HgCdTe Nano-Crystal Based Hetero-Junction Infrared Sensor
, 2018 Advantage of remote-sensing in mid wave infrared (MWIR) spectral range (2 mu m-5 mu m) due to atmospheric transmission window. Dominant photon detectors in this range are single crystal InSb and HgCdTe, while cost of these detectors is very high and ...
K. S. R. K. Rao +3 more
core +1 more source
Coordinate-sensitive photoelectromagnetic IR detector based on HgCdTe
Технологія та конструювання в електронній апаратурі, 2004 A design of a coordinate-sensitive IR detector based on HgCdTe, operating in the mid-infrared spectral range and utilizing the photoelectromagnetic effect, is presented. A detailed analysis of its design and main parameters is carried out.
O. A. Bodnaruk +5 more
doaj
EPJ Web of Conferences, 2018 An advanced airborne triple-pulse 2-μm integrated path differential absorption (IPDA) lidar is under development at NASA Langley Research Center that targets both carbon dioxide (CO2) and water vapor (H2O) measurements simultaneously and independently ...
Petros Mulugeta +11 more
doaj +1 more source
Avalanche Gain Modeling Revisited in HgCdTe APDs
International audienceThe gain in short-wave infrared and mid-wave infrared HgCdTe avalanche photodiodes (APDs) with large diameters has been analyzed using an already established model based on an empirical expression proposed by Okuto–Crowell (OC) and ...
Gout, Sylvain +13 more
core +1 more source
Two-Layer LPE Hgcdte P-on-n 8-18μm Photodiodes
, 1990 This paper reports recent results on two-layer P-on-n LPE HgCdTe heterojunction photodiodes with cutoff wavelengths beyond 19μm. These results demonstrate the potential of photovoltaic HgCdTe detectors to satisfy the detector requirements of advanced ...
E. E. Krueger +5 more
core +1 more source