Results 71 to 80 of about 4,962 (162)
Униполярные барьерные структуры на основе МЛЭ HgCdTe [PDF]
, 2021 В докладе представлены результаты численного моделирования униполярных nBn-структур на основе МЛЭ HgCdTe, а также сравнение результатов расчётов с результатами экспериментальных исследований их электрофизических и фотоэлектрических характеристик ...
Дворецкий, Сергей Алексеевич +8 more
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A theoretical estimation model of response speed for photovoltaic HgCdTe infrared detectors
, 2014 Doping concentration is the key factor affecting the performance of infrared detectors. Based on photovoltaic HgCdTe infrared photodetectors, in order to compute the response speed in engineering applications precisely and fastly, a theoretical ...
Shi ZL(史泽林), Wang X(王霄)
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Thermal Stability in HgCdTe IR Photodiodes
, 2002 Packaging of HgCdTe photodiode detector arrays in a dewar involves degassing at elevated temperatures for several days so as to achieve vacuum integrity.
T. Nguyen +5 more
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HgCdTe MBE Technology : A Focus On Chemical Doping
, 1993 HgCdTe MBE technology is becoming a mature growth technology for infrared focal plane array applications. The ability to dope HgCdTe with In(n-type) and As(p-type) dopants in-situ provides greater flexibilities for fabricating heterojunction devices.
Owen K. Wu
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HgCdTe Photoconductive Mixers for 2-8 THz
, 2001 Heterodyne spectroscopy has been taken to wavelengths as short as 63 micrometers with Schottky-diode mixers. Schottkys, however, are relatively insensitive compared to superconducting mixers such as the hot-electron microbolometer (HEB), which has an ...
Betz, A. L. +3 more
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Development of HgCdTe for LWIR Imagers
, 1986 This paper provides a historical perspective on the emergency of HgCdTe as the material of choice for long wavelength infrared (LWIR) imagers. The need for devices which see room temperature objects through the atmospheric window actually drove the ...
Joseph L. Schmit
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환원식각법을 이용한 HgCdTe 광다이오드의 표면처리 연구
, 2006 학위논문(박사) - 한국과학기술원 : 전기및전자공학전공, 2006.2, [ ix, 109 p. ]$Hg_{1-x}Cd_xTe$ alloy is currently the most utilized infrared photodetector material owing to its high quantum efficiency and bandgap tunability by varying the composition x value.
Lee, Min-Yung, 이민영
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HgCdTe as a playground for massless fermions
, 2015 International audienceBulk films and heterostructures based on HgCdTe compounds can be engineered to fabricate “gapped-at-will” structures.
Teppe, Frédéric
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Background donor concentration in HgCdTe
, 2015 Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors.
Voytsekhovskiy, Alexander V. +6 more
core +2 more sources
Design, Preparation and Application of Dual-Color HgCdTe Infrared Sensor
, 2010 In the paper, the principle, the preparation and the performance of the dual-color infrared HgCdTe detector is introduced. The detector is a combination of different wave band filter and different respond wave band element.
Ji Jun Xiong +4 more
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