Finite element analysis of the package structure of HgCdTe infrared focal plane array detector
Reliable material parameters, correct boundary condition settings, and a reasonably simplified numerical model are key to obtain reliable and reasonable analysis results.
Wenxian Su +3 more
doaj +1 more source
HgCdTe Auger-Suppressed Infrared Detectors Under Non-Equilibrium Operation. [PDF]
A nearly universal goal for infrared photon detection systems is to increase their operating temperature without sacrificing performance. The limiting factor for cooling requirements is the dark current in the detector devices. The dark current in HgCdTe
Emelie, Pierre-Yves
core +1 more source
Modeling of Au Migration and Analysis of Au-Doped HgCdTe Photodetectors. [PDF]
Jin D +8 more
europepmc +1 more source
Van der Waals/MCT heterostructure enabled high-performance uncooled mid-infrared photodetectors via synergistic suppression of dark current and interfacial recombination. [PDF]
Zhang X +13 more
europepmc +1 more source
Advanced Architectures and Emerging Materials for High-Operating-Temperature Infrared Photodiodes. [PDF]
Di Y +6 more
europepmc +1 more source
A Very Thin MCT Film in HDVIP Achieves High Absorption. [PDF]
Jiang L, Sun C, Hu X, Ding R, Lin C.
europepmc +1 more source
MBE Growth of High-Quality HgCdSe for Infrared Detector Applications. [PDF]
Zhang Z +5 more
europepmc +1 more source
HgCdTe 내부로의 인듐 고속열확산과 적외선 감지 소자 제작
학위논문(박사) - 한국과학기술원 : 전기및전자공학과, 1997.2, [ iv, 129 p. ]A new p-n junction formation method on p-HgCdTe by indium rapid thermal diffusion and a new plausible structure of two color IR detector are proposed.
박승만, Park, Seung-Man
core
Balancing positive and negative luminescence for thermoradiative signatureless communications. [PDF]
Nielsen MP +3 more
europepmc +1 more source
Reduction in Dark Current in Photodiodes: A Review. [PDF]
Ülkü A +7 more
europepmc +1 more source

