Results 121 to 130 of about 1,330 (176)
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Calculation of Auger Lifetimes in HgCdTe
Journal of Electronic Materials, 2011Band-to-band Auger recombination mechanisms in HgCdTe are investigated as functions of temperature in the small modulation limit by using realistic electronic structures obtained by empirical pseudopotential calculations and their corresponding wavevector-dependent dielectric functions. The calculated Auger lifetimes are compared with the semiempirical
BERTAZZI, FRANCESCO +2 more
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The HgCdTe electron avalanche photodiode
SPIE Proceedings, 2004Electron injection avalanche photodiodes in short-wave infrared (SWIR) to long-wave infrared (LWIR) HgCdTe show gain and excess noise properties indicative of a single ionizing carrier gain process. The result is an electron avalanche photodiode (EAPD) with “ideal” APD characteristics including near noiseless gain.
J. Beck +7 more
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Modeling of Recombination in HgCdTe
Journal of Electronic Materials, 2008Minority carrier recombination lifetime calculations for narrow-gap semiconductors are of direct practical interest in establishing whether a material’s recombination is extrinsically or intrinsically limited, and therefore in guiding research and development programs regarding material quality improvements.
C.H. Grein, M.E. Flatté, Yong Chang
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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1991
Carrier trapping influences the performance of HgCdTe infrared detectors in the 8–12 μm range by enhancing tunneling currents, reducing excess carrier lifetimes, and increasing g–r and 1/f noise. In this work, the effects of carrier trapping on the tunneling currents in n+p diodes are calculated, and the dependence of the tunneling current on ...
Y. Nemirovsky +3 more
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Carrier trapping influences the performance of HgCdTe infrared detectors in the 8–12 μm range by enhancing tunneling currents, reducing excess carrier lifetimes, and increasing g–r and 1/f noise. In this work, the effects of carrier trapping on the tunneling currents in n+p diodes are calculated, and the dependence of the tunneling current on ...
Y. Nemirovsky +3 more
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SPIE Proceedings, 2005
Some results on the arsenic incorporation in MBE-grown HgCdTe are described. It was found that arsenic surface sticking coefficient during HgCdTe growth was very low, ~1x10-4 at 170°C being very sensitive to the growth temperature. The annealing experiments for activation of arsenic were performed, and the importance of the ambient mercury for the ...
Jun Wu +7 more
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Some results on the arsenic incorporation in MBE-grown HgCdTe are described. It was found that arsenic surface sticking coefficient during HgCdTe growth was very low, ~1x10-4 at 170°C being very sensitive to the growth temperature. The annealing experiments for activation of arsenic were performed, and the importance of the ambient mercury for the ...
Jun Wu +7 more
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Diffusion of As and Sb in HgCdTe
Journal of Crystal Growth, 1992Abstract This paper reports the diffusion mechanisms of ion-implanted As and Sb in HgCdTe, grown by metalorgic chemical vapor deposition (MOCVD), and on the application of the resultant findings to the As diffusion from a grown source. A diffusion model was developed from a chemical analysis using secondary ion mass spectroscopy (SIMS) and a Gaussian
L.O. Bubulac, C.R. Viswanathan
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AIP Conference Proceedings, 2010
While Mercury Cadmium Telluride (MCT) epilayers are important from a technological point of view, bulk crystals are ideally suited for studies of fundamental material properties such as mobility. Even though electronic transport has been treated well in the literature hole transport has not been studied much in MCT despite the popular device structure ...
O. V. S. N. Murthy +4 more
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While Mercury Cadmium Telluride (MCT) epilayers are important from a technological point of view, bulk crystals are ideally suited for studies of fundamental material properties such as mobility. Even though electronic transport has been treated well in the literature hole transport has not been studied much in MCT despite the popular device structure ...
O. V. S. N. Murthy +4 more
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Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1983
HgCdTe heterojunctions consisting of a wide band gap n-type Hg1−xCdxTe layer grown epitaxially on a narrow band gap p-type Hg1−yCdyTe substrate (x>y) were studied. The heterojunction transition region between x and y materials was found to be graded over distances of about 0.4 to 0.8 μm. The position of the p–n junction depletion layer within
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HgCdTe heterojunctions consisting of a wide band gap n-type Hg1−xCdxTe layer grown epitaxially on a narrow band gap p-type Hg1−yCdyTe substrate (x>y) were studied. The heterojunction transition region between x and y materials was found to be graded over distances of about 0.4 to 0.8 μm. The position of the p–n junction depletion layer within
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Photoplasticity and fracture in HgCdTe
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1985We have observed a time delay in HgCdTe in the photoplastic response of these crystals. The magnitude of the time delay and the total change in stress Δσ are dependent on the wavelength of the irradiation. The observation of a time delay provides a basis for establishing that the photoplastic process is a dynamic one, in contrast to prior treatments of
Joseph Pellegrino, J. M. Galligan
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Two-photon absorption in HgCdTe
Applied Optics, 1992Two-photon absorption coefficients in Hg0.78Cd0.22Te are calculated for 10.6-μm radiation at 150 and 300 K by using the Basov formula and the nonparabolic energy band structure approximation. The temperature and composition dependence of the energy gap of HgCdTe are included in these calculations.
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