Results 161 to 170 of about 13,032 (198)
Some of the next articles are maybe not open access.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1989
At North Carolina State University, we have recently employed photoassisted molecular-beam epitaxy (MBE) to successfully prepare p- and n-type modulation-doped HgCdTe. The modulation-doped HgCdTe samples were grown on lattice-matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research Center.
Jeong W. Han +8 more
openaire +1 more source
At North Carolina State University, we have recently employed photoassisted molecular-beam epitaxy (MBE) to successfully prepare p- and n-type modulation-doped HgCdTe. The modulation-doped HgCdTe samples were grown on lattice-matched (100) CdZnTe substrates cut from boules grown at Santa Barbara Research Center.
Jeong W. Han +8 more
openaire +1 more source
MRS Proceedings, 1983
ABSTRACTA time delay has been observed in HgCdTe in the photoplastic response of these crystals. Both the magnitude of the time delay and the total change in stress, Δσ, are dependent on the wavelength of the light. These observations provide a basis for establishing that the photoplastic process is a dynamic one, in contrast to prior treatments of the
J. M. Galligan, J. Pellegrino, T. Manzur
openaire +1 more source
ABSTRACTA time delay has been observed in HgCdTe in the photoplastic response of these crystals. Both the magnitude of the time delay and the total change in stress, Δσ, are dependent on the wavelength of the light. These observations provide a basis for establishing that the photoplastic process is a dynamic one, in contrast to prior treatments of the
J. M. Galligan, J. Pellegrino, T. Manzur
openaire +1 more source
The HgCdTe electron avalanche photodiode
SPIE Proceedings, 2004Electron injection avalanche photodiodes in short-wave infrared (SWIR) to long-wave infrared (LWIR) HgCdTe show gain and excess noise properties indicative of a single ionizing carrier gain process. The result is an electron avalanche photodiode (EAPD) with “ideal” APD characteristics including near noiseless gain.
J. Beck +7 more
openaire +1 more source
HgCdTe monolithic infrared detector
physica status solidi c, 2010AbstractWe report the processes of fabricating monolithic 32×32 infrared detector based on (310) HgCdTe/CdTe/ZnTe/ Si photosensitive heterostructure which was grown by a molecular‐beam epitaxy technique in the free surface of ROIC cells. Optimum parameters of the technological processes were determined.
Maxim V. Yakushev +7 more
openaire +1 more source
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1991
Carrier trapping influences the performance of HgCdTe infrared detectors in the 8–12 μm range by enhancing tunneling currents, reducing excess carrier lifetimes, and increasing g–r and 1/f noise. In this work, the effects of carrier trapping on the tunneling currents in n+p diodes are calculated, and the dependence of the tunneling current on ...
Y. Nemirovsky +3 more
openaire +1 more source
Carrier trapping influences the performance of HgCdTe infrared detectors in the 8–12 μm range by enhancing tunneling currents, reducing excess carrier lifetimes, and increasing g–r and 1/f noise. In this work, the effects of carrier trapping on the tunneling currents in n+p diodes are calculated, and the dependence of the tunneling current on ...
Y. Nemirovsky +3 more
openaire +1 more source
HgCdTe electron avalanche photodiodes
Journal of Electronic Materials, 2004Exponential-gain values well in excess of 1,000 have been obtained in HgCdTe high-density, vertically integrated photodiode (HDVIP) avalanche photodiodes (APDs) with essentially zero excess noise. This phenomenon has been observed at temperatures in the range of 77–260 K for a variety of cutoff wavelengths in the mid-wavelength infrared (MWIR) band ...
M. A. Kinch +4 more
openaire +1 more source
LWIR heterodyne HgCdTe detectors
SPIE Proceedings, 2000Single element and linear array photodetectors operating in heterodyne mode for CO 2 laser radiation detection have been developed and investigated. P-type mercury cadmium telluride (MCT) crystal with x=0.21 composition and hole concentration 1x10 16 cm -3 at T=77K were used as substrates.
K. O. Boltar +4 more
openaire +1 more source
HgCdTe photoconductive detector array
IEEE Transactions on Electron Devices, 1980An Hg 0.8 Cd 0.2 Te photoconductive array of 200 elements has been developed. The array has uniform detectivity and the mean value of D*(12 µm, 1000, 1) field of view (FOV) 50° at 77 K is 3.2 × 1010cm. Hz1/2. W-1. The array was successfully fabricated under severe control of thermal flow during crystallization, carrier control by doping of indium ...
M. Itoh, H. Takigawa, R. Ueda
openaire +1 more source
Two-photon absorption in HgCdTe
Applied Optics, 1992Two-photon absorption coefficients in Hg0.78Cd0.22Te are calculated for 10.6-μm radiation at 150 and 300 K by using the Basov formula and the nonparabolic energy band structure approximation. The temperature and composition dependence of the energy gap of HgCdTe are included in these calculations.
openaire +2 more sources
HgCdTe barrier infrared detectors
Progress in Quantum Electronics, 2016Abstract In the last decade, new strategies to achieve high-operating temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, and multistage (cascade) infrared detectors. The ability to tune the positions of the conduction and valence band edges independently in a broken-gap type-
M. Kopytko, A. Rogalski
openaire +1 more source