Results 171 to 180 of about 13,032 (198)
Some of the next articles are maybe not open access.
2015
In this chapter we will consider the performance of HgCdTe staring FPAs operating in all of the IR spectral bands, under a wide variety of extreme conditions, such as high operating temperatures, reduced backgrounds, and large reverse bias, as indicated by data currently published in the open literature.
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In this chapter we will consider the performance of HgCdTe staring FPAs operating in all of the IR spectral bands, under a wide variety of extreme conditions, such as high operating temperatures, reduced backgrounds, and large reverse bias, as indicated by data currently published in the open literature.
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Infrared Physics, 1975
Abstract The ultimate D∗ of 0.1 eV HgCdTe photodetectors is analyzed assuming an Auger limited band-to-band process determines the carrier lifetime in n-type material. A quantitative comparison of photoconductors and photodiodes in the thermal limit indicates that superior ultimate performance is offered by the photoconductor above 70°K.
M.A. Kinch, S.R. Borrello
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Abstract The ultimate D∗ of 0.1 eV HgCdTe photodetectors is analyzed assuming an Auger limited band-to-band process determines the carrier lifetime in n-type material. A quantitative comparison of photoconductors and photodiodes in the thermal limit indicates that superior ultimate performance is offered by the photoconductor above 70°K.
M.A. Kinch, S.R. Borrello
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HgCdTe heterojunction contact photoconductor
Applied Physics Letters, 1984A new photoconductor device structure is described utilizing a heterojunction contact which incorporates a higher band-gap HgCdTe alloy between the metal contact and the normal band-gap photoconductor. A theoretical treatment of the heterojunction contact photoconductor (HCP) device shows that carrier sweepout can be virtually eliminated; the ...
D. L. Smith +3 more
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Photovoltaic HgCdTe Hybrid Performance
Optical Engineering, 1983Second generation infrared imaging systems require high-density focal plane arrays for staring applications. To meet this need, a focal plane structure using HgedTe photodiodes for detectors and Si charge-coupled devices (CCDs) for signal processing has been developed.
A. H. Lockwood +7 more
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AIP Conference Proceedings, 2010
While Mercury Cadmium Telluride (MCT) epilayers are important from a technological point of view, bulk crystals are ideally suited for studies of fundamental material properties such as mobility. Even though electronic transport has been treated well in the literature hole transport has not been studied much in MCT despite the popular device structure ...
O. V. S. N. Murthy +4 more
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While Mercury Cadmium Telluride (MCT) epilayers are important from a technological point of view, bulk crystals are ideally suited for studies of fundamental material properties such as mobility. Even though electronic transport has been treated well in the literature hole transport has not been studied much in MCT despite the popular device structure ...
O. V. S. N. Murthy +4 more
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Electronic properties of HgCdTe
Journal of Vacuum Science and Technology, 1982The electronic properties of HgCdTe relevant to the operation of photoconductive, photovoltaic, and metal–insulator–semiconductor (MIS) infrared devices will be reviewed. Particular consideration will be given to minority and majority carrier phenomena such as mobility, lifetime, and transition rates occurring in the bulk, surface, and depletion ...
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Infrared Physics, 1984
Abstract Second-generation IR systems, consisting of 2-D mosaics of IR detectors, have been under intense development for the last few years. One of the most successful architectures has been a HgCdTe hybrid focal plane array (FPA), using a Si charge-coupled device (CCD) readout chip interfaced to epitaxial HgCdTe.
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Abstract Second-generation IR systems, consisting of 2-D mosaics of IR detectors, have been under intense development for the last few years. One of the most successful architectures has been a HgCdTe hybrid focal plane array (FPA), using a Si charge-coupled device (CCD) readout chip interfaced to epitaxial HgCdTe.
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2018
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2009
All of these requirements basically push HgCdTe into extreme modes of operation for currently available devices, in which all the warts of the material and processing are exposed. Dark currents must be reduced, dramatically in some cases, requiring a quantum jump in material performance, together with the introduction of innovative detector ...
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All of these requirements basically push HgCdTe into extreme modes of operation for currently available devices, in which all the warts of the material and processing are exposed. Dark currents must be reduced, dramatically in some cases, requiring a quantum jump in material performance, together with the introduction of innovative detector ...
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2014
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