Results 191 to 200 of about 101,004 (302)

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Tuning superelasticity in high entropy alloy via a hidden strain order. [PDF]

open access: yesNat Commun
He Q   +10 more
europepmc   +1 more source

Swelling‐Programmed Topographical Guidance for Dynamic Spheroid Self‐Assembly via a Mechanochemical Hydrogel Niche

open access: yesAdvanced Functional Materials, EarlyView.
A swelling‐programmed micropatterned hydrogel guides adherent cells through a controlled transition from cell–matrix anchoring to cadherin‐mediated cell–cell compaction, enabling rapid assembly of high‐viability spheroids with defined size and morphology.
Han Gyeol Nam   +8 more
wiley   +1 more source

Fast Charge–Discharge of LiNi0.9Co0.05Mn0.05 Enabled by a Bikitaite‐Infused Separator for Li Metal Batteries

open access: yesAdvanced Functional Materials, EarlyView.
A bikitaite‐infused cellulose separator is introduced for Li metal batteries, leveraging bikitaite zeolite's ion‐conductive properties to regulate Li+‐ion flux and suppress dendrite growth. The membrane design ensures uniform Li plating, enhanced electrolyte wettability, and robust thermal/mechanical stability, delivering stable performance and low ...
Isheunesu Phiri   +2 more
wiley   +1 more source

Theoretical and computational modeling studies on high-entropy alloy coatings

open access: yes
Baddi, Prasad   +3 more
core   +1 more source

Memristor‐Driven Active‐Matrix Organic Light‐Emitting Diode for Energy Efficient and High‐Resolution Displays

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim   +6 more
wiley   +1 more source

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