Results 211 to 220 of about 4,299,561 (242)
Some of the next articles are maybe not open access.
IEEE Spectrum, 2007
The Intel's Core 2 microprocessors, based on the latest 45-nanometer CMOS process technology have more transistors and run faster and cooler than microprocessors fabricated with the previous, 65-nm process generation. For compute-intensive music, video, and gaming applications, users will see a hefty performance increase.
Mark Bohr +3 more
openaire +1 more source
The Intel's Core 2 microprocessors, based on the latest 45-nanometer CMOS process technology have more transistors and run faster and cooler than microprocessors fabricated with the previous, 65-nm process generation. For compute-intensive music, video, and gaming applications, users will see a hefty performance increase.
Mark Bohr +3 more
openaire +1 more source
Reliability characteristics of high-k dielectrics
Microelectronics Reliability, 2004Abstract In this paper, recent results of Weibull slopes, area scaling factors, and breakdown behaviors observed for both soft breakdown and hard breakdown are discussed. These results would help to shed light on the breakdown mechanism of HfO 2 gate dielectrics.
Young-Hee Kim, Jack C. Lee
openaire +1 more source
High-k Materials in Flash Memories
ECS Transactions, 2006The scaling down of Flash memories can be pursued using the conventional stacked gate architecture only with major changes of the active dielectrics, mainly the inter-poly dielectric (IPD).The required 4-6 nm EOT thickness for the IPD cannot be achieved by the conventional ONO (Oxide-Nitride-Oxide) technology which starts failing in the 10-12 nm range ...
Mauro Alessandri +15 more
openaire +1 more source
Realization of silicon carbide MIS capacitors with high-K and high-K stack dielectric
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2014Silicon carbide MIS capacitors with high dielectric constant material and its stack has been designed and characterized using TCAD Sentaurus tools. Interface dipole theory on metal-dielectric interface has been used to determine the work function of gate metal on different dielectric materials.
E. Papanasam, Binsu J Kailath
openaire +1 more source
High-K band structures in 164Er
Zeitschrift für Physik A Hadrons and Nuclei, 1997Several of the known rotational bands in 164Er are extended considerably (to around 35 h). In addition, a new coupled band is established and found to decay by an isomeric transition with t1/2 ≥ 170 nsec, to the 11t - state of the known Kπ =7− two-quasi-proton band. The new band is interpreted as a four-quasi-particle structure, with measured values of
P. Bosetti +19 more
openaire +2 more sources
Trapping in high-k dielectrics
Applied Physics Letters, 2010In this paper, an analytical model of trapping in high-k dielectrics is proposed. It starts from the general rate equation and relies on the hypothesis that the density of states involved in the capture mechanism follows a Fermi-like distribution. Thus, the energy depth of the trap level respect to the Fermi level is explicited in the model.
RAO, ROSARIO +2 more
openaire +1 more source
SPIE Proceedings, 1999
High-K dielectric thin films have been investigated as alternative gate dielectrics. Our results suggest that single-layer sputtered ZrO 2 or HfO 2 thin films deposited directly on Si substrate, without the use of a barrier layer, exhibit excellent electrical and reliability characteristics.
Wen-Jie Qi +6 more
openaire +1 more source
High-K dielectric thin films have been investigated as alternative gate dielectrics. Our results suggest that single-layer sputtered ZrO 2 or HfO 2 thin films deposited directly on Si substrate, without the use of a barrier layer, exhibit excellent electrical and reliability characteristics.
Wen-Jie Qi +6 more
openaire +1 more source
Numerical Study of the VDMOS with an Integrated High-K Gate Dielectric and High-K Dielectric Trench
2021 China Semiconductor Technology International Conference (CSTIC), 2021The VDMOS with an integrated high-k gate dielectric and high - k dielectric trench is investigated in this paper. The high-k (HK) dielectric is applied both for the gate dielectric and trench, which improves the performance without increasing the process complexity.
Zhenyu Zhang +6 more
openaire +1 more source
High-k Characterization by RFCV
ECS Meeting Abstracts, 2007Abstract not Available.
Enrique San Andres +7 more
openaire +1 more source