Results 221 to 230 of about 4,299,561 (242)
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2013
Interaction of different materials in the multilayer high-k/metal gate stacks results in the formation of structural defects in the high-k dielectric and interfacial SiO2 layer. This section discusses the impact that defects in intrinsic Hf-based dielectric layers have on the electron trapping process and concurrent defect generation occurring under ...
Chadwin D. Young, Gennadi Bersuker
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Interaction of different materials in the multilayer high-k/metal gate stacks results in the formation of structural defects in the high-k dielectric and interfacial SiO2 layer. This section discusses the impact that defects in intrinsic Hf-based dielectric layers have on the electron trapping process and concurrent defect generation occurring under ...
Chadwin D. Young, Gennadi Bersuker
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High-k YCTO thin films for electronics
2018 International Conference on IC Design & Technology (ICICDT), 2018The high permittivity values reported in rare-earth transition metal oxides ceramics makes them very interesting as alternative gate dielectrics. Here, we summarize our recent results on the yttrium copper titanate (YCTO) thin films under different deposition conditions.
Monteduro A. G. +13 more
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High-k Dielectric Layers for Bioelectronic Applications
IEICE Transactions on Electronics, 2008In many different bioelectronic applications silicon field-effect devices such as transistors or nanowires are used. Usually native or thermally grown silicon oxides serve as interfacing layer to the liquid. For an effective voltage to current conversion of the devices, the main demands for interface layers are low leakage current, low defect density ...
Dirk Borstlap +4 more
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IEEE Electron Device Letters, 2013
We show that multistep deposition cum two-step annealing, comprising an ultraviolet ozone (UVO) anneal followed by a low-temperature rapid thermal anneal (RTA), can significantly improve the performance and reliability of a 7.5-A-equivalent-oxide-thickness (EOT) HfO2/TiN gate stack, comprising a 25-A HfO2 on ~3 A SiOx, i.e., prepared from direct HfO2 ...
Yew, K. S. +2 more
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We show that multistep deposition cum two-step annealing, comprising an ultraviolet ozone (UVO) anneal followed by a low-temperature rapid thermal anneal (RTA), can significantly improve the performance and reliability of a 7.5-A-equivalent-oxide-thickness (EOT) HfO2/TiN gate stack, comprising a 25-A HfO2 on ~3 A SiOx, i.e., prepared from direct HfO2 ...
Yew, K. S. +2 more
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2013
Due to the need of increasing the gate capacitance of metal-oxide-semiconductor (MOS) devices, the layer thickness of the SiO2 gate dielectric is reducing to such thickness that the leakage current is becoming too large to control. Suitable high-oxides hence need to be found in order to replace the existing gate dielectric, because the thicker layer of
Silva, E. L., Santos, M. C.
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Due to the need of increasing the gate capacitance of metal-oxide-semiconductor (MOS) devices, the layer thickness of the SiO2 gate dielectric is reducing to such thickness that the leakage current is becoming too large to control. Suitable high-oxides hence need to be found in order to replace the existing gate dielectric, because the thicker layer of
Silva, E. L., Santos, M. C.
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Microelectronics Reliability, 2004
In this work, we present the reliability of HfO 2 and how it depends on the barrier height and the nature of the bi-layer structure. We will also discuss how these factors lead to different charge fluence, charge-to-breakdown, and breakdown characteristics.
Y. H. Kim +5 more
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In this work, we present the reliability of HfO 2 and how it depends on the barrier height and the nature of the bi-layer structure. We will also discuss how these factors lead to different charge fluence, charge-to-breakdown, and breakdown characteristics.
Y. H. Kim +5 more
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Challenges of Ta2O5 as High-k Dielectric for Nanoscale DRAMs
2006 25th International Conference on Microelectronics, 2006Abstract The present status, successes, challenges and future of Ta 2 O 5 , and mixed Ta 2 O 5 -based high- k layers as active component in storage capacitors of nanoscale DRAMs are discussed. The engineering of new Ta 2 O 5 -based dielectrics (doped Ta 2 O 5 and multicomponent Ta 2 O 5 -based high- k dielectrics) as well as of metal/high- k ...
Elena Atanassova, Albena Paskaleva
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2006 IEEE International Reliability Physics Symposium Proceedings, 2006
In this paper, transient charge trapping and detrapping characteristics in high-k CMOSFET have been studied systematically. Detrapping characteristics for nMOSFET and pMOSFET are due to hole trapping and electron trapping, respectively. Transient charge recombination within high-k layer was found to be the main reason for the input signal dependence in
C. Kang +6 more
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In this paper, transient charge trapping and detrapping characteristics in high-k CMOSFET have been studied systematically. Detrapping characteristics for nMOSFET and pMOSFET are due to hole trapping and electron trapping, respectively. Transient charge recombination within high-k layer was found to be the main reason for the input signal dependence in
C. Kang +6 more
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Thermal Stability of High k Layers
MRS Proceedings, 2002ABSTRACTThermal stability of amorphous phases in various high-k layers (Al2O3, ZrO2, HfO2, ZrAlOx, HfAlOx and HfSiOx) and the phase transformation of crystalline ZrO2 and HfO2 were studied experimentally, as functions of surface preparation, deposition conditions, material composition and post deposition thermal treatment.
C. Zhao +13 more
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2003
Introduction The need for high-k gate dielectrics and materials requirement Deposition techniques ALCVD, MOCVD, PLD, MBE Characterization Physico-chemical characterization X-ray and electron spectroscopies Oxygen diffusion and thermal stability Defect characterization by ESR Band alignment determined by photo-injection Electrical characteristics Theory
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Introduction The need for high-k gate dielectrics and materials requirement Deposition techniques ALCVD, MOCVD, PLD, MBE Characterization Physico-chemical characterization X-ray and electron spectroscopies Oxygen diffusion and thermal stability Defect characterization by ESR Band alignment determined by photo-injection Electrical characteristics Theory
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